Hostname: page-component-848d4c4894-ttngx Total loading time: 0 Render date: 2024-06-02T05:45:14.717Z Has data issue: false hasContentIssue false

The Role of Dilution Gas in Plasma Deposition of Amorphous Hydrogenated Carbon

Published online by Cambridge University Press:  16 February 2011

Hsueh Yi Lu
Affiliation:
Department of Chemical Engineering, Northwestern University, Evanston, Illinois 60208
Mark A. Petrich
Affiliation:
Department of Chemical Engineering, Northwestern University, Evanston, Illinois 60208
Get access

Abstract

We have studied the effect of hydrogen dilution on the structural and optical properties of plasma-deposited amorphous hydrogenated carbon. Electron spin resonance reveals that the dangling bond density does not change with hydrogen dilution, presumably because there is an excess of hydrogen present during these depositions. Information from 13C NMR, however, shows that hydrogen dilution induces changes in composition, hydrogenation, sp2/sp3 carbon bonding ratio, and the size of sp2 bonded clusters. These changes modify the electronic band structure, as observed by shifts in optical measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Jansen, F., Machonkin, M., Kaplan, S., and Hark, S., J. Vac. Sci. Technol. A3, 605 (1985).Google Scholar
2. Beeman, D., Silverman, J., Lynds, R., and Anderson, M. R., Phys. Rev. B, 30, 870 (1984).Google Scholar
3. Robertson, J. and O'Reilly, E. P., Phys. Rev. B, 35, 2946 (1987).Google Scholar
4. Jensen, K. F., in Microelectronics Processing, Chemical Engineering Aspects, ed. by Hess, D. W., Jensen, K. F. (American Chemical Society, Washington, 1989), pp. 197236.Google Scholar
5. Tauc, J., in Amorphous and Liquid Semiconductors, ed. by Tauc, J. (Plenum Press, London, 1974), pp. 159220.Google Scholar
6. Gerstein, B. C. and Dybowski, C. R., Transient Techniques in NMR of Solids, (Academic Press, Orlando, 1985).Google Scholar
7. Grill, A., Meyerson, B.S., Patel, V.V., Reimer, J.A., and Petrich, M.A., Journal of Applied Physics 61, 2874 (1987).Google Scholar
8. Catherine, Y., in Propertiesa nd Characterizationo f Amorphous Carbon Films, Materials Science Forum, 52 & 53, ed. by Pouch, J. J. and Alterovitz, S. A. (Trans Tech Publications, Switzerland, 1989), pp. 175196.Google Scholar
9. Turban, G., Catherine, Y., and Grolleau, B., Thin Solid Films, 67, 309 (1980).Google Scholar
10. Gleason, K. K., Wang, K. S., Chen, M. K., and Reimer, J. A., J. Appl. Phys. 61, 2866 (1987).Google Scholar
11. Baker, S. H., Spear, W. E., and Gibson, A. G., Phil. Mag. B, 62, 213 (1990).Google Scholar
12. Savvides, N., in Propertiesa nd Characterizationo f Amorphous Carbon Films, Materials Science Forum, 52 & 53, ed. by Pouch, J. J. and Alterovitz, S. A. (Trans Tech Publications, Switzerland, 1989), pp. 407426.Google Scholar
13. Mott, N. F. and Davis, E. A., Electronic Properties in Non-Crystalline Solids (Clarendon, Oxford, 1979).Google Scholar
14. Petrich, Mark A., in Properties and Characterization of Amorphous Carbon Films, Materials Science Forum, 52 & 53, ed. by Pouch, J. J. and Alterovitz, S. A. (Trans Tech Publications, Switzerland, 1989), pp. 387406.Google Scholar
15. Lifshitz, Y., Kasi, S. R., and Rabalais, J. W., in Properties and Characterization of Amorphous Carbon Films, Materials Science Forum, 52 & 53, ed. by Pouch, J. J. and Alterovitz, S. A. (Trans Tech Publications, Switzerland, 1989), pp. 237290.Google Scholar
16. Koidl, P., Wild, Ch., Dischler, B., Wagner, J., and Ramsteiner, M., in Properties and Characterization of Amorphous Carbon Films, Materials Science Forum, 52 & 53, ed. by Pouch, J. J. and Alterovitz, S. A. (Trans Tech Publications, Switzerland, 1989), pp. 4170.Google Scholar
17. Smith, F. W., in Properties and Characterization of Amorphous Carbon Films, Materials Science Forum, 52 & 53, ed. by Pouch, J. J. and Alterovitz, S. A. (Trans Tech Publications, Switzerland, 1989), pp. 323340.Google Scholar