Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-25T13:32:15.967Z Has data issue: false hasContentIssue false
  • English
  • Français

The Role of Ion Beam Assisted Surface Chemistry in Etching: Adsorption and Reactions of ALKYL Halides

Published online by Cambridge University Press:  25 February 2011

Duncan Marshall  and
Richard B. Jackman
Duncan Marshall
Affiliation:
University College London, Electronic and Electrical Engineering, Torrington Place, London, WC1E 7JE, UK
Richard B. Jackman
Affiliation:
University College London, Electronic and Electrical Engineering, Torrington Place, London, WC1E 7JE, UK
Get access

Abstract

The form of ideal surface chemistry that is necessary for chemically assisted ion beam etching (CAIBE), with particular reference to in-situ processing is considered. Whilst to date CAIBE has been almost exclusively carried out with chlorine, distinct advantages exist if a compound that which displays spontaneous reactivity which is limited to one or two monolayers can be used. The role of alkyl halides in this scenario has been investigated through the use of surface spectroscopic probes to investigate the microscopic chemical and ion beam assisted reactivity that may be achieved. Dichloroethane has been found to display promising behaviour.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 23
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Jackman, RB and Tyrrell, GC 8th Int. Conf. Ion Plasma Ass. Tech. (IPAT'92), 1992. p102 Google Scholar
2. Komuro, M and Hiroshima, H J. Vac. Sci. Tech., B9 (1991), 2656 Google Scholar
3. Kosugi, T, Gamo, K, Namba, S and Aihara, R J. Vac. Sci. Tech.. B9 (1991), 2660 Google Scholar
4. Kosugi, T, Yamashiro, T, Aihara, R, Gamo, K and Namba, S J. Vac. Sci. Tech., B9 (1991), 3099 Google Scholar
5. Wang, YL, Harriot, LR, Hamm, RA and Temkin, H Appl. Phys. Letts., 56 (1990), 749 Google Scholar
6. Aoyagi, Y, Shinmura, K, Kawasaki, K, Tanaka, T, Gamo, K, Namba, S and Nakamoto, I Appl. Phys. Letts., 60 (1992), 968 Google Scholar
7. Ehrlich, DJ and Nguyen, VT (Eds) “Emerging Technologies for in-situ processing” (Martinus Nijhoff, Dordrecht 1988)Google Scholar
8. Ameen, MS and Mayer, TM J. Appl. Phys., 63 (1988), 1152 CrossRefGoogle Scholar
11. Tyrrell, GC, Marshall, D, Beckman, J and Jackman, RB J. Phys.(Condens.Mat.), 3 (1991), S 179 Google Scholar
12. Coburn, JW Sol. State Tech., 29 (1986), 117 Google Scholar
13. McNevin, SC and Becker, GE J. Appl. Phys., 58 (1985), 4670 Google Scholar
14. O'Brien, WL, PaaulsenBoaz, CM, Rhodin, TN and Rathbun, LC J Appl. Phys., 64 (1988), 6523 Google Scholar
15. Jackman, RB, “Photochemical etching of III-V semiconductors” p.297 in “Photochemical processing of electronic materials” Eds. Boyd, IW and Jackman, RB (Academic, London 1992)Google Scholar
16. Stevenson, R Chem. Brit., 26 (1990), 731 Google Scholar
17. Murrell, AJ, Wee, A, Fairbrother, DH, Singh, NK, Foord, JS, Davies, GJ and Andrews, DA J. Appl. Phys., 68 (1990), 4053 CrossRefGoogle Scholar
18. Schafer, B, Buck, M and Hess, P Infrared Phys., 25 (1985), 245 CrossRefGoogle Scholar
19. Jackman, RB, Price, RJ and Foord, JS Appl. Surf. Sci., 36 (1989), 296 Google Scholar
20. Marshall, D and Jackman, RB Sub. to Vacuum (April 1992)Google Scholar