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The Role of Oxygen in p-Type InP

Published online by Cambridge University Press:  25 February 2011

J. Michel ,
J. Jeong ,
K.M. Lee  and
L.C. Kimerling
J. Michel
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07041
J. Jeong
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07041
K.M. Lee
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07041
L.C. Kimerling
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07041
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Abstract

We have studied the influence of oxygen on the optical properties of Be implanted InP. Be implanted p-type InP without oxygen shows a strong deep photoluminescence (PL) band at 0.82 eV following anneal. As the oxygen concentration increases, the 0.82 eV PL-band disappears. We attribute the disappearance of this PL-band to the formation of oxygen complexes with the implantation induced defects. In epitaxial grown, nominally undoped InP a new PL-line is observed at ~1.2 eV. The paramagnetic state of the phosphorus on indium P^ antisite is observed by optically detected magnetic resonance (ODMR) as a modulation of the photoluminescence in all Be implanted samples without oxygen. The antisite resonance is detected as a reduction of the 0.82 eV PL-band and the 1.2 eV PL-band. The observation of the Fe3+ resonance by ODMR spectroscopy is reported for the first time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 151
Copyright
Copyright © Materials Research Society 1990

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