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The Role of the In Source IN InN Growth from Molecular Beams

Published online by Cambridge University Press:  10 February 2011

S. M. Donovan ,
B. Gila ,
J. D. MacKenzie ,
K. N. Lee ,
C. R. Abernathy ,
R. G. Wilson  and
G. T. Muhr
S. M. Donovan
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
B. Gila
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
J. D. MacKenzie
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
K. N. Lee
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
C. R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
R. G. Wilson
Affiliation:
Consultant, Stevenson Ranch, CA
G. T. Muhr
Affiliation:
Epichem Inc., Allentown, PA
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Abstract

InN has been grown in a gas-source MBE system using an RF nitrogen plasma source and standard TMI, solution TMI and solid In. Both solid and solution TMI produce InN with electron and carbon concentrations ≥ 1020 cm−3. Solution TMI-derived material, however, contains significantly less oxygen (8 × 1018 cm−3 vs. ≥ 1020 cm−3 for solid TMI). While the amine used to liquefy the TMI helps to displace the ether believed to be responsible for the oxygen contamination, it also appears to interfere with the growth, resulting in poorer morphology than for standard TMI. While solid In produced the lowest carrier concentration (≤ mid-1018 cm−3), it also produced the worst morphology of the sources examined, presumably due to poor surface mobility. Based on this data, it appears that carbon can play a significant role in the electrical properties of InN, and that the In source is critical in determining the structural quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 525
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] Donovan, S M, McKenzie, J D, Abernathy, C R, Pearton, S J, Ren, F, Jones, K, M Cole Applied Physics Letters 70 2592 (1997).Google Scholar
[2] Hovel, H. J. and Cuomo, J. J., Appl. Phys. Lett. 20 71 (1972).Google Scholar
[3] Tansley, T. L. and Egan, R. J., Physica B 185 190 (1993)..Google Scholar
[4] Tansley, T. L. and Foley, C. P., Elec. Lett. 20 1066 (1984).Google Scholar
[5] Bryden, W. A., Ecelberger, S. A., Morgan, J. S., Poehler, T. O. and Kistenmacher, T. J., Mater. Res. Soc. Symp. Proc. 242 409 (1992).Google Scholar
[6] Sullivan, B. T., Parsons, R. R., Westra, K. L. and Brett, M. J., J. Appl. Phys. 64 414 (1988).Google Scholar
[7] Matsuoka, T., J. Cryst. Growth 124,433 (1992).Google Scholar
[8] Strite, S. and Morkoc, H., J. Vac. Sci. and Technol. B10 1237 (1992), and references therein.Google Scholar
[9] Strite, S., Chandrasekhar, D., Smith, David J., Sariel, J., Chen, H., Teraguchi, N., H. Morkoc Journal of Crystal Growth 127, 204 (1993).Google Scholar
[10] Sato, Y. and Sato, S., Mat. Sci. and Eng. B 35 171 (1995), and references therein.Google Scholar
[11] Abernathy, C. R., Pearton, S. J., Ren, F. and Wisk, P. W., J. Vac. Sci. and Technol. B11 179 (1993).Google Scholar
[12] MacKenzie, J. D., Abernathy, C. R. and Muhr, G. T., J. Crystal Growth, (1996).Google Scholar
[13] Jenkins, D. W. and Dow, J. D., Phys. Rev. B 39 3317 (1989).Google Scholar
[14] Schoenfeld, W., Antonell, M. J. and Abernathy, C. R., J. Crystal Growth, in press.Google Scholar