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Role of the Substitutional Oxygen Donor in the Residual N-Type Conductivity in GaN

Published online by Cambridge University Press:  15 February 2011

W.M. Chen ,
I.A. Buyanova ,
Mt. Wagner ,
B. Monemar ,
J.L. Lindstrom ,
H. Amano  and
I. Akasaki
W.M. Chen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden, wmc@ifm.liu.se
I.A. Buyanova
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden, wmc@ifm.liu.se
Mt. Wagner
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden, wmc@ifm.liu.se
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden, wmc@ifm.liu.se
J.L. Lindstrom
Affiliation:
Swedish Defense Research Establishment, Box 1165, S-581 11 Linköping, Sweden
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
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Abstract

A detailed photoluminescence (PL) study reveals a striking similarity in local vibrational properties of a defect center in GaN as compared to that for the substitutional Op donor in GaP. This observation could be interpreted as if the center is in fact related to the substitutional oxygen donor in GaN. The deep-level nature experimentally determined for the defect center calls for caution of a commonly referred model that the substitutional oxygen donor is responsible for the residual n-type conductivity in GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G5.4
Copyright
Copyright © Materials Research Society 1999

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References

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