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Search for New High-κ Dielectrics by Combinatorial Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

Bin Xia ,
Ryan Smith ,
Fang Chen ,
Stephen A. Campbell  and
Wayne L. Gladfelter
Bin Xia
Affiliation:
Department of Chemistry
Ryan Smith
Affiliation:
Department of Chemistry
Fang Chen
Affiliation:
Department of Electronic and Computer Engineering, University of Minnesota, Minneapolis, MN 55455
Stephen A. Campbell
Affiliation:
Department of Electronic and Computer Engineering, University of Minnesota, Minneapolis, MN 55455
Wayne L. Gladfelter
Affiliation:
Department of Chemistry
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Abstract

To develop a high-κ gate dielectric for replacing SiO2 in MOSFETs, multi-component metal oxides could have advantages over single metal oxides because they may offer higher dielectric constants (κ's) as well as other favorable properties. To find the film composition for obtaining a good dielectric from the given component oxides is a time-consuming and costly process for multi-component systems. Recently, we reported a combinatorial chemical vapor deposition (CVD) technique to deposit compositional spreads of ternary metal-oxides for high-κ dielectrics. In this work, compositional spreads of ZrO2, TiO2, SnO2 and HfO2 were deposited using anhydrous metal nitrates. By measuring chemical composition, film thickness, and electrical properties, we are able to map κ and establish its dependence on film composition. This high-throughput deposition technique allows us to generate a compositional library quickly for screening material properties. In addition, a crystalline phase which does not exist in any of the four pure oxides, α-PbO2, was detected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 765: Symposium D – CMOS Front-End Materials and Process Technology , 2003 , D1.9
Copyright
Copyright © Materials Research Society 2003

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