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Selection Rules in the Raman Spectrum of Porous Silicon

Published online by Cambridge University Press:  15 February 2011

F. Agulló-Rueda ,
J. D. Moreno ,
E. Montoya ,
R. Guerrero-Lemus ,
R. J. Martín-Palma  and
J. M. Martínez-Duart
F. Agulló-Rueda
Affiliation:
Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, E-28049 Madrid, SPAIN
J. D. Moreno
Affiliation:
Departamento de Física Aplicada C-12, Universidad Autónoma de Madrid, Cantoblanco, E-28049 Madrid, SPAIN
E. Montoya
Affiliation:
Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, E-28049 Madrid, SPAIN
R. Guerrero-Lemus
Affiliation:
Departamento de Física Aplicada C-12, Universidad Autónoma de Madrid, Cantoblanco, E-28049 Madrid, SPAIN
R. J. Martín-Palma
Affiliation:
Departamento de Física Aplicada C-12, Universidad Autónoma de Madrid, Cantoblanco, E-28049 Madrid, SPAIN
J. M. Martínez-Duart
Affiliation:
Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, E-28049 Madrid, SPAIN Departamento de Física Aplicada C-12, Universidad Autónoma de Madrid, Cantoblanco, E-28049 Madrid, SPAIN
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Abstract

We have measured the Raman spectrum of porous silicon layers for different light polarizations. For the polarizations where the first-order Raman peak is forbidden in bulk silicon, porous silicon shows a band. This band is almost as intense as the one in the allowed polarizations but its lineshape is very different. The ‘forbidden’ band is usually wider and shifted to lower energies with respect to the allowed band. Both bands are analyzed in terms of sample characteristics, layer depth, and excitation wavelength.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 571
Copyright
Copyright © Materials Research Society 1997

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References

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