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Selective Nucleation of Single Crystal CVD Diamond and its Applicability to Semiconductor Devices

Published online by Cambridge University Press:  26 February 2011

H. Kawarada ,
J. S. MA ,
T. Yonehara  and
A. Hiraki
H. Kawarada
Affiliation:
Osaka Uiversity, Faculty of Engineering, Suita, Osaka, Japan.
J. S. MA
Affiliation:
Osaka Uiversity, Faculty of Engineering, Suita, Osaka, Japan.
T. Yonehara
Affiliation:
Canon Inc., Tamura, Hiratsuka, Kanagawa, Japan.
A. Hiraki
Affiliation:
Osaka Uiversity, Faculty of Engineering, Suita, Osaka, Japan.
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Abstract

Using selective nucleation at edges or corners of μ m-size dots of Si, periodically arrayed diamond particles have been reproducibly fabricated. The particles are grown from single nuclei and have nearly-single crystal features. The properties of the diamond arrays compared with polycrystalline films have been investigated using cathodoluminescence and Schottky diodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 195
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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