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Self-Assembling of Epitaxial Nisi2 In Si(001)

Published online by Cambridge University Press:  10 February 2011

S. Teichert ,
M. Falke ,
G. Beddies  and
H.-J. Hinneberg
S. Teichert
Affiliation:
Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany, teichert@physik.tu-chemnitz.de
M. Falke
Affiliation:
Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany
G. Beddies
Affiliation:
Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany
H.-J. Hinneberg
Affiliation:
Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany
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Abstract

The preparation of buried epitaxial layers of a compound ABx in a matrix of the material A can be performed by allotaxy [1]. In the first process step a distribution of ABx precipitates is prepared in the matrix A by codeposition of A and B. This contribution reports on the spatial distribution and the crystallographic orientation of NiSi2precipitates in the Si- matrix. Cross-section transmission electron microscopy was utilized to characterize the samples. The observed depth distribution of Ni in the Si matrix differs remarkably from the calculated distribution given by the deposition rates of Si and Ni. This redistribution of Ni results in two well distinguishable bands of NiSi2precipitates - a narrow one and a broad one - in the Si matrix. The narrow band consists of epitaxial NiSi2 precipitates; and a mixture of epitaxially and twinned grown NiSi2precipitates is formed in the broad band. Under certain deposition conditions self-ordering of the NiSi2precipitates in the narrow band has been observed parallel and perpendicular to the growth direction. In these cases the diameter of the epitaxial NiSi2precipitates varies between 12 and 50 A and the distance between them is in the order of some 10 Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 570: Symposium V – Epitaxial Growth , 1999 , 219
Copyright
Copyright © Materials Research Society 1999

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References

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