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Sic Power Diodes Improvement by Fine Surface Polishing

Published online by Cambridge University Press:  15 March 2011

P. Godignon ,
R. Perez ,
D. Tournier ,
N. Mestres ,
H. Mank  and
D. Turover
P. Godignon
Affiliation:
Centro Nacional de Microelectrónica, CNM-CSIC, Barcelona, Spain
R. Perez
Affiliation:
Centro Nacional de Microelectrónica, CNM-CSIC, Barcelona, Spain Instituto de Ciencias de Materiales de Barcelona, ICMAB-CSIC, Barcelona, Spain
D. Tournier
Affiliation:
Centro Nacional de Microelectrónica, CNM-CSIC, Barcelona, Spain
N. Mestres
Affiliation:
Instituto de Ciencias de Materiales de Barcelona, ICMAB-CSIC, Barcelona, Spain
H. Mank
Affiliation:
NOVASIC, Le Bourget du Lac, France
D. Turover
Affiliation:
NOVASIC, Le Bourget du Lac, France
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Abstract

Surface treatment is a key technological parameter in the microelectronics technology and especially for SiC devices since high temperatures must be used for implanted impurities annealing and crystal damage recovery. In this work we take profit of a novel fine polishing process developed by NOVASIC to improve the electrical characteristics of Boron and Aluminium implanted Schottky diodes, which are surface quality highly sensitive devices. The mentioned fine polishing process allows to remove a layer thickness of 100nm to 3000nm on the surface of a processed SiC wafer, reducing the surface roughness to RMS of 1Å. The impact of this process on the electrical properties of the samples shows a general improvement of characteristics reproducibility, reduction of leakage current and improvement of breakdown of Boron implanted diodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J5.12
Copyright
Copyright © Materials Research Society 2004

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