Hostname: page-component-848d4c4894-ttngx Total loading time: 0 Render date: 2024-04-30T14:03:07.239Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon Carbide Hot-Wall Epitaxy for Large-Area, High-Voltage Devices

Published online by Cambridge University Press:  01 February 2011

Michael O'Loughlin ,
K. G. Irvine ,
J. J. Sumakeris ,
M. H. Armentrout ,
B. A. Hull ,
C. Hallin  and
A. A. Burk Jr.
Michael O'Loughlin
Affiliation:
michael_oloughlin@cree.com, Cree, Inc., Materials R&D, 4600 Silicon Dr., Durham, NC, 27703, United States, (919)313-5641
K. G. Irvine
Affiliation:
kenneth_irvine@cree.com, Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
J. J. Sumakeris
Affiliation:
joe_sumakeris@cree.com, Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
M. H. Armentrout
Affiliation:
Melissa_Armentrout@cree.com, Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
B. A. Hull
Affiliation:
brett_hull@cree.com, Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
C. Hallin
Affiliation:
christer_hallin@cree.com, Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
A. A. Burk Jr.
Affiliation:
al_burk@cree.com, Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
Get access

Abstract

The growth of thick silicon carbide (SiC) epitaxial layers for large-area, high-power devices is described. Horizontal hot-wall epitaxial reactors with a capacity of three, 3-inch wafers have been employed to grow over 350 epitaxial layers greater than 100 μm thick. Using this style reactor, very good doping and thickness uniformity and run-to-run reproducibility have been demonstrated. Through a combination of reactor design and process optimization we have been able to achieve the routine production of thick epitaxial layers with morphological defect densities of around 1 cm−2. The low defect density epitaxial layers in synergy with improved substrates and SiC device processing have resulted in the production of 10 A, 10 kV junction barrier Schottky (JBS) diodes with good yield (61.3%).

Keywords

vapor phase epitaxy (VPE)morphologyepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D04-01
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hecht, C., Thomas, B., and Bartsch, W., Mat. Sci. Forum Vols. 527-529 (2006) pp 239–242.Google Scholar
2. Product Specifications, Cree, Inc., 4600 Silicon Dr., Durham, NC, USA.Google Scholar
3. Hull, B., Sumakeris, J., Loughlin, M. O., Zhang, Q., Richmond, J., Powell, A., Paisley, M., Tsvetkov, V., Hefner, A., and Rivera, A., presented at the 2007 International Conference on Silicon Carbide and Related Materials, Otsu, Japan, 2007 (to be published).Google Scholar
4. Loughlin, M. O. and Sumakeris, J., U.S. Patent No. 7 230 274 (12 June, 2007)Google Scholar
5. Sumakeris, J., Paisley, M., and Loughlin, M. O., U.S. Patent No. 7 118 781 (10 October, 2006)Google Scholar
6.Candela CS2, KLA-Tencor, Inc., Freemont, CA, USA.Google Scholar
7. Leonard, R., Khlebnikov, Y., Powell, A., Basceri, C., Brady, M., Khlebnikov, I., Jenny, J., Malta, D., Paisley, M., Tsvetkov, V., Zilli, R., Deyneka, E., Hobgood, H., and Carter, C., presented at the 2007 International Conference on Silicon Carbide and Related Materials, Otsu, Japan, 2007 (to be published).Google Scholar