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Silicon Growth Rate Enhancement Using Trisilane in a Laser Direct-Writing Technique

Published online by Cambridge University Press:  15 February 2011

S. Boughaba  and
G. Auvert
S. Boughaba
Affiliation:
École Polytechnique de Montréal, Département de Génie Physique, C. P. 6079, Succursale “Centre-Ville”, Montréal (QC), Canada H3C 3A7
G. Auvert
Affiliation:
C. N. E. T., France Telecom, B. P. 98, 38243 Meylan Cedex, France
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Abstract

An argon-ion laser based direct-writing technique was used to deposit micron-size silicon lines from the decomposition of silane (SiH4) and trisilane (Si3H8) gases. The substrates used were 0.1 μrn polysilicon/1 μ.m silicon dioxide/<100> monosilicon multilayered structures. The vertical silicon deposition rate was investigated as a function of the laser-induced surface temperature and gas pressure. For temperatures ranging between 1000 and 1410 °C, the pressure was varied in the range 5-250 mbar and 0.1-30 mbar for SiH4 and Si3H8, respectively. For both gases, three growth regimes could be distinguished according to precursor pressure. The deposition rates achieved using trisilane are far higher than those obtained with silane in spite of the use of a reduced gas pressure range. For a laser-induced surface temperature of 1300 °C and a precursor pressure of 10 mbar, the deposition rates achieved using SiH4 and Si3H8 are, respectively, 0.42 and 20 μ.m/s, representing an enhancement factor of 50 with the later.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 595
Copyright
Copyright © Materials Research Society 1996

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References

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