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Simultaneous Relaxation of Network and Defects in Silicon-Implanted a-Si:H*

Published online by Cambridge University Press:  15 February 2011

J. Nakata ,
S. Sherman ,
S. Wagner ,
P. A. Stolk  and
J. M. Poate
J. Nakata
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 On leave from Department of Electrical Engineering, Kinki University, Higashiosaka, Osaka 577, Japan
S. Sherman
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
P. A. Stolk
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

We report extensive optical and electronic transport data on silicon-implanted a-Si:H, annealed in steps in the dark or with additional illumination. All measured properties relax gradually with increasing annealing temperature. The dark conductivity of the as-implanted film is dominated by hopping conduction via midgap defects. This channel is pinched off during the initial stages of annealing. The midgap defect density and the Urbach energy follow an annealing path that agrees qualitatively with the trajectory postulated by the equilibrium theory of the dangling-bond density. Therefore, the silicon network and the defect density equilibrate continuously during network relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 173
Copyright
Copyright © Materials Research Society 1995

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Footnotes

*

We dedicate this paper to the memory of the late Professor Yoshio Inuishi of Kinki University

References

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