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Single Crystal Epitaxial Growth of β-SiC for Device and Integrated Circuit Applications

Published online by Cambridge University Press:  25 February 2011

J. D. Parsons
J. D. Parsons*
Affiliation:
Hughes Research Labs, 3011 Malibu Cyn. Rd., Malibu, Ca. 90265
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Abstract

Beta SiC is an important semiconductor whose development has been slowed by synthesis difficulties. The physical and electronic properties which make β-SiC desirable for high speed and high power electronics are discussed, with special emphasis on field effect transistor (FET) applications. A history of synthesis efforts is presented to illuminate the obstacles encountered in the growth of semiconductor device quality P-SiC. A new approach to single crystal epitaxy of β-SiC, using TiC as a substrate, is described. The properties of TiC which make it a uniquely suitable substrate for β-SiC epitaxial growth are discussed, and procedures used to prepare TiC surfaces for β-SiC epitaxy are described. The growth process employed at our laboratory, chemical vapor deposition (CVD), is described, and experimental observations of the effects of the CVD growth environment on β-SiC epitaxial growth are presented. Based on these observations, we propose to synthesize β-SiC in a singlesource reaction, using molecules which decompose directly to SiC units. This contrasts with current approaches, which introduce Si and C separately, in molecules which must decompose and subsequently react to form SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 271
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Johnson, E.O., RCA Review, 163 (1965).Google Scholar
2. Keys, R.W., Proc. IEEE 1(60), 225 (1972).Google Scholar
3. Keys, R.W., Science 168, 796 (1970).Google Scholar
4. Keys, R.W., IEEE Spectrum 6(5), 35 (1969).Google Scholar
5. Parsons, J.D., Bunshah, R.F., and Stafsudd, O.M., Solid State Technology 28(11), 133 (1985).Google Scholar
6. Yoshida, S., Daimon, H., Yamanaka, M., Sakuma, E., Misawa, S., and Endo, K., J. Appl. Phys. 60, 2989 (1986).Google Scholar
7. Scace, R.I. and Slack, G.A., in Silicon Carbide – A High Temperature Semiconductor, edited by O'connor, J.R. and Smiltens, J. (Pergamon, New York, 1960), p. 24.Google Scholar
8. Acheson, E.G., J. Franklin Inst. 136, 194 (1893);.136, 279 (1893).Google Scholar
9. van Arkel, A.E. and deBoer, J.H., Z. Anorg. Chem. 148, 345 (1925).Google Scholar
10. Lely, J.A., Ber. Deut. Keram. Ges. 32, 229 (1955).Google Scholar
11. Kamath, G.S., Mat. Res. Bull. 4, S57 (1969).Google Scholar
12. Yu.Tairov, M. and Tsvetkov, V.F., J. Cryst. Growth 52, 146 (1981).Google Scholar
13. Nelson, W.E., Halden, F.A., and Rosengren, A., J. Appl. Phys. 37, 333 (1966).Google Scholar
14. Verma, A.R. and Krishna, P., Polymorphism and Polytypism in Crystals (Wiley & Sons, New York, 1966).Google Scholar
15. Smitheles, C.J., Metal Reference Book 1 and 2 (Interscience, New York, 1955).Google Scholar
16. Yajima, F., Tanaka, T., Bannai, E., and Kawai, S., J. Cryst. Growth 47, 493 (1979).Google Scholar
17. Otani, S., Honma, S., Tanaka, T., and Ishizawa, Y., J. Cryst. Growt 61, 107 (1983).Google Scholar
18. Parsons, J.D. and Krajenbrink, F.G., AACG/West, Fallen Leaf Lake, Ca. (June 1–4, 1982).Google Scholar
19. Parsons, J.D., Hunter, A.T., and Reynolds, D.C., Proc. 12th Intl. Symp. GaAs and Related Compounds (Inst. Phys. Conf. Ser. 83, Bristol, 1986), p. 211.Google Scholar
20. Hsieh, K.H., Parsons, J.O., Lichtmann, L.S., Jelloian, L. and Krajenbrink, F.G., Proc. 13th Intl. Syrup. GaAs and Related Compounds (Inst. Phys. Conf. Ser. 83, Bristol, 1987), p. 477.Google Scholar
21. Parsons, J.D., Lichtmann, L.S., Krajenbrink, F.G., and Brown, D.W., J. Cryst. Growth 77, 32 (1986).Google Scholar
22. Dunn, G.L., Ph.D. Dissertation, U.C.L.A. (1979).Google Scholar
23. Schottky, W., Physik Zeits, 41, p. 570 (1940).Google Scholar
24. Bardeen, J., Phys. Rev. 7–1, No. 10, (1947).Google Scholar