Skip to main content Accessibility help

Small Signal AC-Surface Photovoltage Technique for Non-Contact Monitoring of Near Surface Doping and Recombination-Generation in the Depletion Layer

  • D. Marinskiy (a1), J. Lagowski (a1), M. Wilson (a1), A. Savtchouk (a1), L. Jastrzebski (a2) and D. DeBusk (a3)...

Small signal non-contact ac-SPV method for monitoring near surface doping (NSD) in silicon has recently been introduced in commercial diagnostic tools. High chopping frequency light with a submicron penetration depth is used to generate small SPV signal and this signal is in turn monitored using a transparent pickup electrode. This technique has the advantage of producing fast, non-destructive full wafer measurement. Under certain conditions, the magnitude of this ac-SPV signal is inversely proportional to the depletion layer capacitance. If a depletion layer barrier height is known this allows the calculation of the concentration of ionized donors or acceptors in the depletion layer. NSD measurements by ac-SPV method were typically done for doping concentrations up to about 1016 cm−3. Only recently this range has been extended to 1018 cm−3, making it a very attractive technique for monitoring low and medium dose implants and especially for wafer scale mapping of implant uniformity and activation efficiency. In addition, the frequency dependence of the SPV signal provides a mean for evaluating the minority carrier lifetime in the near surface region of bulk and epitaxial wafers.

The influence of surface/interface traps upon small ac-SPV signal has never been fully understood. This paper quantifies the role of interface traps in the monitoring of NSD. The effect of typical surface treatments such as HF, SCI and SCI+SC2 wafer cleans are examined.

Hide All
1. Nakhmanson, R., Solid State Electron. 18, p. 617 (1975).
2. Kamieniecki, E., J.Vac.Sci.Technol., 20, p. 811 (1981).
3. Munakata, C. and Nishimatsu, S., Japan. J. Appi. Phys. 25, p. 807 (1986).
4. Nicollian, E.H. and Brews, J.R. MOS Physics and Technology, (Wiley, New York, 1982) Ch.4, 5.
5. Sze, S.M. Physics of Semiconductor Devices, 2d ed. (Wiley, New York, 1981) p. 248.
6. Wilson, M., Lagowski, J., Savtchouk, A., Jastrebski, L. and D‘Amico, J., to be published in ASTM Conference on Gate Dielectric Oxide Integrity, 1999.
7. DeBusk, D., Hoff, A., Solid State Technology, 42, April, 1999.
8. Roman, P., Hwang, D., Torek, K., Ruzyllo, J., and Kamieniecki, E., Mat. Res. Soc. Symp. Proc. 386, p. 401 (1995).
9. Marinskiy, D., Wilson, M., Unpublished results.
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed