Hostname: page-component-848d4c4894-2pzkn Total loading time: 0 Render date: 2024-06-10T05:54:35.480Z Has data issue: false hasContentIssue false
  • English
  • Français

Solid Phase Epitaxy Process Of Ar-Ion Bombarded Silicon Surfaces and Recovery of Crystallinity by Thermal Annealing Observed With Scanning Tunneling Microscopy

Published online by Cambridge University Press:  15 February 2011

Katsuhiro Uesugi ,
Masamichi Yoshimura  and
Takafumi Yao
Katsuhiro Uesugi
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Masamichi Yoshimura
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Takafumi Yao
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Get access

Abstract

The solid-phase epitaxy (SPE) process of Ar+-ion bombarded Si (001) surfaces and recovery of crystallinity by thermal annealing are studied “in situ” by using a scanning tunneling Microscope (STM). As-bombarded surfaces consist of grains of 0.63–1.6 nm in diameter. The grains gradually coalesce and form clusters of 2–3.6 nm in diameter at annealing temperature of 245° C (2×1) and (1×2) reconstructed regions surrounded by amorphous regions are partially observed on the surface by prolonged annealing, which suggests the onset of SPE. Successive observation reveals that the smoothing of the surface occurs layer by layer. As annealing temperature is raised up to 445 °C, the amorphous layer epitaxially crystallizes up to the topmost surface, and (2×1) reconstructed surface with Monatomic-height steps is observed. The smoothing of the surface structures and the formation of nucleation of Si islands are observed during annealing at 500 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 497
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Bean, J.C., Becker, G.E., Petroff, P.M. and Seidel, T.E., J. Appl. Phys. 48 (1977) 907.Google Scholar
2 Csepregi, L., Kennedy, E.F., Mayer, J.W. and Sigmon, T.W., J. Appl. Phys. 49 (1978) 3906.Google Scholar
3 Lau, S.S., Matteson, S., Mayer, J.W., Revesz, P., Gyulai, J., Roth, J., Sigmon, T.W. and Cass, T., Appl. Phys. Lett. 34 (1979) 76.Google Scholar
4 Sumitomo, K., Tanaka, K., Katayama, I., Shoji, F. and Oura, K., Surf. Sci. 242 (1991) 90.Google Scholar
5 Bock, W., Gnaser, H. and Oechsner, H., Surf. Sci. 282 (1993) 333.Google Scholar
6 Shigeta, T., Appl. Phys. Lett. 52 (1988) 619.Google Scholar
7 Uesugi, K., Yap, T., Sato, T., Sueyoshi, T. and Iwatsuki, M., Appl. Phys. Let. 62 (1993) 1600.Google Scholar
8 Hamers, R.J., Kohler, U.K. and Demuth, J.E., J. Vac. Sci. Technol. A 8 (1990) 195.Google Scholar