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Sputter-Deposited Bcc Tantalum on Steel with the Interfacial Tantalum Nitride Layer

Published online by Cambridge University Press:  17 March 2011

Anamika Patel ,
Leszek Gladczuk ,
Charanjeet Singh Paur  and
Marek Sosnowski
Anamika Patel
Affiliation:
Electrical and Computer Engineering Department, New Jersey Institute of Technology University Heights, Newark, NJ 07102, U.S.A
Leszek Gladczuk
Affiliation:
Electrical and Computer Engineering Department, New Jersey Institute of Technology University Heights, Newark, NJ 07102, U.S.A
Charanjeet Singh Paur
Affiliation:
Electrical and Computer Engineering Department, New Jersey Institute of Technology University Heights, Newark, NJ 07102, U.S.A
Marek Sosnowski
Affiliation:
Electrical and Computer Engineering Department, New Jersey Institute of Technology University Heights, Newark, NJ 07102, U.S.A
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Abstract

Tantalum has mainly two phases: alpha phase (bcc structure) and beta phase (tetragonal structure). The meta-stable beta phase is usually obtained in sputtered films. Alpha phase is preferred over the beta for some applications as beta phase is very brittle. One of such application is to protect steel from the erosive and the corrosive wear. It was found that with the intermediate layer of tantalum nitride the preferred alpha phase was grown on steel by DC magnetron sputtering technique. Electrical and structural properties of these films were studied by four-point probe measurement and x-ray diffraction (XRD). Stoichiometry of the interfacial tantalum nitride layer was investigated by nuclear reaction analysis (NRA). Influence of the interfacial film thickness and the ratio of argon and nitrogen gas during reactive deposition of tantalum nitride on the tantalum phase were investigated. This work also reports on the dependence of tantalum phase on the substrate temperature (100-400°C) during sputtering in Ar and Kr gases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 697: Symposium P – Surface Engineering 2001--Fundamentals and Applications , January 2001 , P5.6
Copyright
Copyright © Materials Research Society 2002

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References

[1] Kock, W. and Paschen, P., JOM, pp. 33–38, October 1989.Google Scholar
[2] Clevenger, L.A., Bojarczuk, N.B., Holloway, R., Harper, J.M.E., Cabral, C. Jr, Schad, R.G., Cardone, F., Syolt, L., J. App. Phys. 73, 300–308 (308).Google Scholar
[3] Read, M.H. and Altman, C., App. Phys. Lett. 7, 51 (1965)Google Scholar
[4] Lee, S.L., Cipollo, M., Windover, D. and Rickard, C., Surf. Coat. Technol. 120–121, 44–52 (52).Google Scholar
[5] Brossa, F., Piatti, G. and Bardy, M., J. Nucl. Mat. 103–104, pp. 261–266, 1981.Google Scholar
[6] Face, D.W. and Prober, D. E., J. Vac. Sci. Technol. A 5(6), 3408–3411 (1987).Google Scholar
[7] Chen, G.S., Chen, S.T., Huang, S.C. and Lee, H.Y., App. Sur. Sci. 169–170, 353–357 (357).Google Scholar
[8] Colgan, E.G. and Fryer, P.M., US Patent # 5,221, 449.Google Scholar
[9] Lesker, Kurt. J. Company, Clarington, PA.Google Scholar
[10] Berg, S., Larsson, T., Nender, C. and Blom, H.O., J. App. Phys., 63 (3), 887–891 (1988)Google Scholar
[11] Biersack, J.P., Haggmark, L.G., Nucl. Instr. and Math. 174, 257 (1980).Google Scholar
[12] Matson, D.W., McClanahan, E.D., Rice, J.P., Lee, S.L. and Windover, D., Surf. Coat. Technol. 133–134, 411–416 (416).Google Scholar