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Stability Against Concentration Fluctuations in Compound Semiconductors

Published online by Cambridge University Press:  03 September 2012

P. J. Desre
P. J. Desre*
Affiliation:
Laboratoire de Thermodynamique et Physico-Chimie Métallurgiques, CNRS URA 29, INPG/ENSEEG, BP 75, 38402 Saint Martin d'Hères Cédex, France.
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Abstract

The variation of the composition within the narrow range of off stoic hiometry allowed for compounds is determinant for the population of various intrinsic point defects. As such concentration fluctuations result in inhomogeneities of defect distributions. On the basis of statistical thermodynamics, applied to concentration fluctuation analysis in the III-V compounds, a thermodynamic stability length is defined and calculated as a function of temperature for GaAs, GaSb and GaP. This thermodynamic stability length defines the scale above which full composition homogeneity is unattainable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 123
Copyright
Copyright © Materials Research Society 1992

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References

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