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Strain evolution and phonons in AlN/GaN superlattices

Published online by Cambridge University Press:  01 February 2011

V. Darakchieva ,
P. P. Paskov ,
M. Schubert ,
E. Valcheva ,
T. Paskova ,
H. Arwin ,
B. Monemar ,
H. Amano  and
I. Akasaki
V. Darakchieva
Affiliation:
IFM, Linköping University, S-581 83 Linköping, Sweden
P. P. Paskov
Affiliation:
IFM, Linköping University, S-581 83 Linköping, Sweden
M. Schubert
Affiliation:
Fakultät für Physik and Geowissenschaften, Universität Leipzig, 04103 Leipzig, Germany
E. Valcheva
Affiliation:
IFM, Linköping University, S-581 83 Linköping, Sweden
T. Paskova
Affiliation:
IFM, Linköping University, S-581 83 Linköping, Sweden
H. Arwin
Affiliation:
IFM, Linköping University, S-581 83 Linköping, Sweden
B. Monemar
Affiliation:
IFM, Linköping University, S-581 83 Linköping, Sweden
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, Tempaku-ku, Nagoya 468, Japan
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, Tempaku-ku, Nagoya 468, Japan
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Abstract

AlN/GaN superlattices (SLs) with different periods grown on GaN buffer layers were studied by infrared spectroscopic ellipsometry (IRSE), Raman scattering (RS) and highresolution reciprocal space mapping (RSM). The lattice parameters and the degree of strain in the GaN buffer and the SL constituents were determined. Phonon modes originating from the buffer layer and the SL sublayers were identified and their frequency shifts were correlated with the strain state of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.60
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Gleize, J., Damangeot, F., Frandon, J., Renucci, M. A., Widmann, F., and Daudin, B., Appl. Phys. Lett. 74, 703 (1999).Google Scholar
2. Gleize, J., Renucci, M. A., Frandon, J., and Damangeot, F., Phys. Rev. B 60, 15985 (1999).Google Scholar
3. Schubert, M., Kasic, A., Tiwald, T. E., Woollam, J. A., Härle, V., Off, J., Scholz, F., MRS Internet J. Nitride Semicond. Res. 5, W.11.39 (2000).Google Scholar
4. Davydov, V. Yu., Smirnov, A. N., Smirnov, M. B., Karpov, S. V., Goncharuk, I. N., Kyutt, R. N., Baidakova, M. V., Sakharov, A. V., Zavarin, E. E., Lundin, W. V., Harima, H., and Kisoda, K., Phys. Status Solidi C 1–4, xxxx (2003).Google Scholar
5. Darakchieva, V., Paskova, T., Paskov, P. P., Monemar, B., Ashkenov, N., and Schubert, M., Phys. Status Solidi A 195, 516 (2003).Google Scholar
6. Angerer, H., Brunner, D., Freudenberg, F., Ambacher, O., Stutzmann, M., Höpler, R., Metzger, T., Born, E., Dollinger, G., Bergmaier, A., Karsch, S., and Körner, H.-J., Appl. Phys. Lett. 71, 1504 (1997).Google Scholar
8. Schubert, M., Infrared Ellipsometry on semiconductor layer structures: Phonons, plasmons and polaritons, (Springer, Berlin-Heidelberg, 2004).Google Scholar
9. Goñi, A. R., Siegle, H., Syassen, K., Thomsen, C., and Wagner, J. -M., Phys. Rev. B 64, 035205 (2001).Google Scholar
10. Davydov, V. Yu., Averkiev, N. S., Goncharuk, I. N., Nelson, D. K., Nikitina, I. P., Polkovnikov, A. S., Smirnov, A. N., Jacobson, M. A., and Semchinova, O. K., J. Appl. Phys. 82, 5097 (1997).Google Scholar
11. Yamaguchi, M., Yagi, T., Azuhata, T., Sota, T., Suzuki, K., Chichibu, S., and Nakamura, S., J. Phys.: Condens. Matter 9, 241 (1997).Google Scholar
12. Darakchieva, V., Paskov, P. P., Paskova, T., Birch, J., Tungasmita, S., and Monemar, B., Appl. Phys. Lett. 80, 2302 (2002).Google Scholar
13. Gleize, J., Renucci, M. A., Frandon, J., Bellet-Amalric, E., and Daudin, B., J. Appl. Phys. 93, 2065 (2003).Google Scholar
14. Wagner, J. –M. and Bechstedt, F., Appl. Phys. Lett. 77, 346 (2000).Google Scholar
15. Kuball, M., Hayes, J. M., Prins, A. D., van Uden, N. W. A., Dunstan, D. J., Shi, Y., and Edgar, J. H., Appl. Phys. Lett. 78, 724 (2001).Google Scholar
16. Deger, C., Born, E., Angerer, H., Stutzmann, M., Hornsteiner, J., Riha, E., and Fischerauer, G., Appl. Phys. Lett. 72, 2833 (1997).Google Scholar