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Stress Driven Instability in Non-Hydrostatically Stressed Crystals and its Role in the Problems of Crystalline Thin Films

Published online by Cambridge University Press:  22 February 2011

Michael A. Grinfeld*
Affiliation:
Department of Mathematics, Rutgers University, New Brunswick, NJ 08903
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Abstract

It was demonstrated in [1] that, in the absence of surface tension aflat boundary of non-hydrostatically stressed elastic solids is always unstable with respect to “mass rearrangement”. The physical mechanisms of the rearrangement can be different, for instance, a)melting-freezing or vaporization-sublimation processes at liquid-solid or vapor-solid phase boundaries, b»surface diffusion of particles along free or interfacial boundaries, b)adsorption-desorbtion of the atoms in epitaxial crystal growth, etc… We discuss the role of this instability in the problems of epitaxy and, in particular, the opportunities delivered by this instability for explanation of the recently discovered phenomena of the dislocation-free Stranski-Krastanow pattern of growth [2]. These phenomena cannot be interpreted in the framework of traditional viewpoints since, according to the classical theory, the Stranski-Krastanow pattern is a result of proliferation of the misfit dislocation appearing on the interface “crystalline film-substratum” [3].

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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