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The Stress Driven Islands Formation in Epitaxial Films and Solid HE4 Films.

Published online by Cambridge University Press:  25 February 2011

Michael A. Grinfeld*
Affiliation:
Department of Mathematics, Rutgers University, New Brunswick, NJ 08903
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Abstract

We discuss the static and quasi-static problems appearing in the theory of morphological instability of interfaces. The approach has allowed to predict the corrugations in He4 films and to explain the dislocation-free Stranski-Krastanow pattern of epitaxial growth of thin solid films with the critical film thickness H = σμ/τ2 (σ is a surface energy, μ- the shear modulus, and τ - the mismatch stress). In this paper we discuss possible morphological patterns of corrugations and their changes which appear in result of the stress driven “rearrangement” destabilization of originally flat interfaces.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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