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Structural and electrical characterizations of oxynitride films on solid phase epitaxially grown silicon carbide

Published online by Cambridge University Press:  21 March 2011

L. K. Bera ,
W. K. Choi ,
D. McNeill ,
S. K. Ray ,
S. Chatterjee  and
C. K. Maiti
L. K. Bera
Affiliation:
Microelectronics Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
W. K. Choi
Affiliation:
Microelectronics Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
D. McNeill
Affiliation:
Department of Electronics and Electrical Engineering, The Queen's University of Belfast, Belfast, U.K.
S. K. Ray
Affiliation:
Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur, India.
S. Chatterjee
Affiliation:
Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur, India.
C. K. Maiti
Affiliation:
Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur, India.
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Abstract

We have investigated the structural and electrical properties of as-prepared and rapid thermal oxynitride films on C+ implanted solid phase epitaxially grown SiC. The oxynitride was grown using N2O. The C concentration of the samples was estimated to be 1, 2 and 5 at. %. From the infrared spectra, samples with 1 and 2 at. % carbon showed that the carbon was substitutionally incorporated into the silicon. No precipitation of SiC was detected. However, for the 5 at. % C sample, some precipitation was observed as indicated by a broad peak at ∼800 cm−1. The oxynitride films showed the Si-O-Si stretching mode at ∼1100 cm−1. The shoulder at 980–1067 cm−1 was due to the O-Si-N bond. The peak at 830 cm−1 was due to the Si-N and Si-C bonds and C-O complex vibrational mode was observed at 663 cm−1. Electrical characterization of the oxynitride films was carried out using the MOS capacitor structure. The interface state density was found to range between 5.7×1011 to 3.35×1012 cm−2eV−1 and increased with an increase in the C concentration. The electrical breakdown field was found to be in the range of 5–7 MV cm−1 and reduced with an increase in C concentration. The charge-to-breakdown value was measured and decreased with an increase in C concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.14
Copyright
Copyright © Materials Research Society 2001

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References

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