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Structural and Electrical Properties of Gas immersion Laser Doped Layers in Crystalline Silicon

Published online by Cambridge University Press:  22 February 2011

T.W. Sigmon ,
P.G. Carey ,
R.L. Press ,
T.S. Fahlen  and
R.J. Pressley
T.W. Sigmon
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
P.G. Carey
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
R.L. Press
Affiliation:
XMR, Inc. Santa Clara, CA 95051
T.S. Fahlen
Affiliation:
XMR, Inc. Santa Clara, CA 95051
R.J. Pressley
Affiliation:
XMR, Inc. Santa Clara, CA 95051
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Abstract

4 He backscattering and channeling and 4-point probe resistivity measurements are used to characterize the doping of 〈100〉 Si directly from the gas phase by using a laser induced melt/recrystallization process. Impurity concentrations from 3×1019 to 5×1020 cm−3 and sheet resistivities as low as 20 Ω/╒ are obtained by variation of the laser energy density or number of passes. Diodes fabricated by this process exhibit near ideal I-V characteristics with sharp reverse breakdowns determined by junction edge effects. Annealing at 850° C further reduces the generation-recombination centers to values that result in an ideality factor of 1.0.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 247
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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