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Structural Characterization of Crystalline Si-C-N Films

Published online by Cambridge University Press:  10 February 2011

E. G. Wang ,
Cheng-Zhang Wang ,
Changfeng Chen  and
Yan Chen
E. G. Wang
Affiliation:
State Key Laboratory for Surface Physics, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, P. 0. Box 603, Beijing 100080, China Department of Physics, University of Nevada, Las Vegas, NV 89154
Cheng-Zhang Wang
Affiliation:
Department of Physics, College of William and Mary, Williamsburg, VA 23187
Changfeng Chen
Affiliation:
Department of Physics, University of Nevada, Las Vegas, NV 89154
Yan Chen
Affiliation:
Department of Chemistry, State University of New York, Buffalo, NY 14260
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Abstract

High quality crystalline Si-C-N films on silicon substrate have been synthesized by bias-assisted hot filament chemical vapor deposition (CVD) using a gas mixture of nitrogen and methane. Scanning electron microscopy images show that the Si-C-N clusters are composed of many columnar crystals with hexagonal facets. X-ray diffraction and transmission electron microscopy analyses confirm the formation of Si-C-N crystals with lattice parameters a=7.06Å and c=2.72Å. First principles calculations are performed for β-Si3–nCnN4 (n=0,1,2,3). The calculated results support the experimental structural characterization and provide further insight into the property of the system. With increasing amount of C substitution, the bulk modulus progressively increases to 4.44 Mbar, comparable to that of diamond (4.43 Mbar), and both a and c are reduced but the ratio c/a shows little variation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 498: Symposium AA – Covalently Bonded Disordered Thin-Film Materials , 1997 , 301
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] For a recent review on the subject, see E. G. Wang, Progress in Materials Sciences, 1997 (to be published).Google Scholar
[2] Cohen, M. L., Phys. Rev. B 32, 1988 (1985);Google Scholar
Liu, A. Y. and Cohen, M. L., Science 245, 841 (1989).Google Scholar
[3] Nakao, A., Iwaki, M., Sakairi, H., and Terasima, K., Nucl. Instrum. Methods Phys. Res. B 65, 352 (1992).Google Scholar
[4] Komatsu, S., Hirohata, Y., Fukuda, S., Hino, T., Yamashina, T., Hata, T., and Kusakabe, , Thin Solid films 193, 917 (1990).Google Scholar
[5] Nastasi, M., Kossowsky, R., Hirovnen, J. P., and Elliot, N., J. Mater. Res. 3, 1127 (1989).Google Scholar
[6] Uslu, C., Park, B., and Poker, D. B., J. Elee. Mater. 25, 23 (1996).Google Scholar
[7] Bendeddouche, A., Berjoan, R., Beche, E., Merie-Mejean, T., Schamm, S., Serin, V., Taillades, G., Pradel, A., and Hillel, R., J. Appl. Phys. 81, 6147 (1997).Google Scholar
[8] Bhusari, D. M., Chen, C. K., Chen, K. H., Chuang, T. J., Chen, L. C., and Lin, M. C., J. Mater. Res. 12, 322 (1997).Google Scholar
[9] He, Zhigang, Carter, G., and Colligon, J. S., Thin Solid films 283, 90 (1996).Google Scholar
[10] Riedel, R., Greiner, A., Miehe, G., Dressier, W., Fuess, H., Bill, J., and Aldinger, E., Angew. Chem. Int. Ed. Engl. 36, 603 (1997).Google Scholar
[11] Wang, E. G., Chen, Y., and Guo, L. P., Phys. Ser. T46, 108 (1997).Google Scholar
[12] Chen, Y., Wang, E. G., and Guo, L. P., Chinese Patent No 96 1032299.5 (26 March, 1996).Google Scholar
[13] Chen, Y., Wang, E. G., Chen, F., and Guo, L. P., J. Phys.: Condens. Matter 8, L685 (1996).Google Scholar
[14] Liu, A. Y. and Cohen, M. L., Phys. Rev. B 32, 10727 (1990).Google Scholar
[15] Teter, D. M. and Hemley, R. J., Science 271, 53 (1996).Google Scholar
[16] Wei, S.-H. and Krakauer, H., Phys. Rev. Lett. 55, 1200 (1985).Google Scholar
[17] Kohn, W. and Sham, L. J., Phys. Rev. 140, A1133 (1965).Google Scholar
[18] Kerker, G. P., J. Phys. C 13, L189 (1980).Google Scholar
[19] Wang, C.-Z., Yu, R., and Krakauer, H., Phys. Rev. B 53, 5430 (1996).Google Scholar
[20] Wang, C.-Z., Yu, R., and Krakauer, H., to be published.Google Scholar
[21] Wigner, E., Phys. Rev. 46, 1002 (1934).Google Scholar
[22] Monkhorst, H. J. and Pack, J. D., Phys. Rev. B 13, 5188 (1976).Google Scholar
[23] Yu, R., Singh, D., and Krakauer, H., Phys. Rev. B 43, 6411 (1991).Google Scholar
[24] Wang, C.-Z., Yu, R., and Krakauer, H., Phys. Rev. B 54, 11161 (1996).Google Scholar
[25] Birch, F., J. Geophys. Res. 83, 1257 (1978).Google Scholar
[26] Wyckoff, R. W. G., Crystal Structures (John Wiley &Sons, New York, vol. 2, 1964), p. 159.Google Scholar
[27] Yu, K. M., Cohen, M. L., Haller, E. E., Wansen, W. L., Liu, A. Y., and Wu, I. C., Phys. Rev. B 49, 5034 (1994).Google Scholar
[28] Chen, Y., Guo, L. P., and Wang, E. G., Phil. Mag. Lett. 75, 155 (1997).Google Scholar