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Structural Effects in Al(111)/Si(111) Heteroepitaxy by Partially Ionized Beam Deposition α

Published online by Cambridge University Press:  28 February 2011

A. S. Yapsir ,
C.-H. Choi ,
S. N. Yang ,
T.-M. Lu ,
M. Madden  and
B. Tracy
A. S. Yapsir
Affiliation:
Center for Integrated Electronics and Physics Department, Renselaer Polytechnic, Institute, Troy, NY 12180.
C.-H. Choi
Affiliation:
Center for Integrated Electronics and Physics Department, Renselaer Polytechnic, Institute, Troy, NY 12180.
S. N. Yang
Affiliation:
Center for Integrated Electronics and Physics Department, Renselaer Polytechnic, Institute, Troy, NY 12180.
T.-M. Lu
Affiliation:
Center for Integrated Electronics and Physics Department, Renselaer Polytechnic, Institute, Troy, NY 12180.
M. Madden
Affiliation:
Intel Corporation, Santa Clara, CA 95051
B. Tracy
Affiliation:
Intel Corporation, Santa Clara, CA 95051
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Abstract

Single crystal Al(111) films were grown on Si(111) surface at room temperature under a conventional vacuum condition using the partially ionized beam (PIB) deposition technique. The Al films were deposited with an ion to atom ratio of about 0.3% and an acceleration voltage of 1 kV. Transmission electron microscopy (TEM) analysis showed that the as-deposited films were single crystal with certain density of dislocation networks. These dislocations disappeared following a heat treatment at 450°C for 30 min. From X-ray diffraction and TEM patterns, it was observed that the Al(111) was aligned to the substrate with Al<1l0>//Si<1l0>. Possible mechanisms of the PIB epitaxial growth and a novel structural defect that is unique to this large lattice mismatch system are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , pp. 465 - 470
Copyright
Copyright © Materials Research Society 1988

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References

1 Ignat'ev, A. S., Morekov, V. G., Petrova, A. G., Rybin, A. V., and Manzha, N. M., Sov. Tech. Phys. Lett. 8, 174(1982).Google Scholar
2 Yamada, I., Inokawa, H., and Takagi, T., J. Appl. Phys. 56, 2746(1984); Jpn. J. Appl. Phys. 24, L173(1985).Google Scholar
3 Jin, H.-S., Yapsir, A. S., Lu, T.-M., Gibson, W. M., Yamada, I., and Takagi, T., Appl. Phys. Lett. 50, 1062(1987).CrossRefGoogle Scholar
4 Choi, C.-H., Harper, R. A., Yapsir, A. S., and Lu, T.-M., Appl. Phys. Lett. 51, 1993(1988).Google Scholar
5 LeGoues, F. K., Krakow, W., and Ho, P. S., in Layered structures-epitaxy and interfaces, edited by Gibson, J. M. and Dawson, L. R. (Materials Research Society, Pittsburgh, 1985), Vol. 37, p.395; Philos. Mag. A 53, 833(1986).Google Scholar
6 Yamada, I., Palmstrom, C. J., Kennedy, E., Mayer, J. W., Inokawa, H., and Takagi, T., in Layered Structures-Epitaxy and Interfaces, eds. Gibson, J. M. and Dawson, L. R. (Materials Research Society, Pittsburgh, 1985), Vol. 37, p. 402.Google Scholar
7 Mei, S.-N., Lu, T.-M., and Robert, S., IEEE Electron Device Lett. EDL–8, 503(1987).Google Scholar
8 Mei, S.-N., and Lu, T.-M., J. Vac. Sci. Tech. A6, 9(1988).CrossRefGoogle Scholar
9 Kern, W. and Puotlineu, D. A., RCA Rev. 31, 187(1970).Google Scholar
10 Zur, A., and McGill, T. C., J. Appl. Phys 55, 378(1984).Google Scholar
11 Yapsir, A. S., Bai, P., Lu, T.-M., Appl. Phys. Lett. (submitted).Google Scholar
12 Szymonski, M., and Poradzisz, A., Appl. Phys. A 28, 175(1982).CrossRefGoogle Scholar
13 Muller, K. H., J. Vac. Sci. Tech. A 4, 184(1986).CrossRefGoogle Scholar