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Structure and Carrier-Transport in a-Si:H, a-Si(Ge): H Films Prepared by Chemical Annealing

Published online by Cambridge University Press:  21 February 2011

Hajime Shirai ,
Kenjiro Nakamura ,
Masanobu Azuma ,
Jun-ichi Hanna  and
Isamu Shimizu
Hajime Shirai
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori- ku Yokohama-city Japan, 227
Kenjiro Nakamura
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori- ku Yokohama-city Japan, 227
Masanobu Azuma
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori- ku Yokohama-city Japan, 227
Jun-ichi Hanna
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori- ku Yokohama-city Japan, 227
Isamu Shimizu
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori- ku Yokohama-city Japan, 227
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Abstract

The stability and opto-electric properties of a-Si:H films fabricated by “chemical annealing (CA)” with excited states of He (He*) were systematically investigated. The films made by the CA mode showed a high photoconductivity due to a low level of defect density, 2×1015cm-3, and improvement in the stability against light soaking. A marked improvement was also found in the hole-transport in films fabricated by the CA. The structural relaxation on the growing surface was also enhanced by addition of a small amount of Ge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 511
Copyright
Copyright © Materials Research Society 1992

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References

[1] Das, D., Shirai, H., Hanna, J. and Shimizu, I., Jpn. J. Appl. Phys., 30 (1991) L239 CrossRefGoogle Scholar
[2] Shirai, H., Das, D., Hanna, J. and Shimizu, I., Appl. Phys. Lett., 59 (1991) 1096 Google Scholar
[3] Shirai, H., Ariyoshi, T., Hanna, J. and Shimizu, I., J. Non-cryst. Solids, 137&138 (1991) 693 Google Scholar
[4] Mahan, A.H., Carapella, J., Nelson, B.P., Crandall, R.S. and Balberg, I., J. Appl. Phys 69 (1991) 6728 CrossRefGoogle Scholar
[5] Ganguly, G. and Matsuda, A., Tech. Digest of the 3rd Sunshine Workshop (Yokohama, 1991) pp51 Google Scholar
[6] Mahan, A. and Vanecek, M., Tech. Digest of the 3rd Sunshine Workshop (Yokohama, 1991) pp3 Google Scholar
[7] Shirai, H., Hanna, J. and Shimizu, I., Jpn. J. Appl. Phys., 30 (1991) L881 Google Scholar
[8] Shirai, H., Nakamura, K., Hanna, J. and Shimizu, I., J. Non-cryst. Solids, 137&138 (1991) 653 CrossRefGoogle Scholar
[9] Ritter, D., Waiser, K. and Zeldov, E., J. Appl. Phys., 62 (1987) 4563 Google Scholar
[10] Meyer, W. and Neldel, H., Z. Tech. Phys., 12 (1937) 588 Google Scholar
[11] Shibata, N., Oda, S., and Shimizu, I., Jpn. J. Appl. Phys., 26 (1987) L276 Google Scholar
[12] Meaudre, R., Meaudre, M., Roca i Cabairocas, P., Tanidi, S., Bouizen, Y. and Theye, M.L., J. Non-cryst. Sotids, 137&138 (1991) 171 CrossRefGoogle Scholar