Hostname: page-component-848d4c4894-x5gtn Total loading time: 0 Render date: 2024-06-12T09:37:25.085Z Has data issue: false hasContentIssue false
  • English
  • Français

Structure Effect on Electrical Properties of Ito Films Prepared by Rf Reactive Magnetron Sputtering

Published online by Cambridge University Press:  10 February 2011

Li-Jian Meng  and
M. P. dos Santos
Li-Jian Meng
Affiliation:
Departamento de Física, Instituto Superior de Engenharia do Porto, Rua de São Tomé, 4200 Porto, Portugal, ljmeng@ci.uminho.pt
M. P. dos Santos
Affiliation:
Departamento de Fisica, Universidade do Minho, 4710 Braga, Portugal
Get access

Abstract

ITO films have been deposited onto glass substrates by rf reactive magnetron sputtering using In-Sn (90–10) alloy target. After the deposition, the films were annealed in air at 500 °C for 30, 60, 90 and 180 min respectively. The film structure varies as the annealing time is changed. The film electrical properties show a strongly dependence on the film structure. Although all the films show a preferred orientation along the (400) direction, the film which has high (222) diffraction peak intensity, has high carrier mobility and low resistivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 431
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Badway, W.A., Afifi, H.H. and Elgair, E.M., J. Electrochem. Soc. 137, 1592(1990).Google Scholar
2. Meng, L.J., Li, C.H. and Zhong, G.Z., J. Lum. 39, 11(1987).Google Scholar
3. Takaki, S., Shigesato, Y., Harada, H., Kojima, H., Oyama, T. and Haranou, T., SID'90, 76(1990).Google Scholar
4. Davis, L., Thin Solid Films 236, 1(1993).Google Scholar
5. Shigesato, Y. and Paine, D.C., Thin Solid Films 238, 44(1994).Google Scholar
6. Lee, S.B., Pincenti, J.C., Cocco, A. and Naylor, D.L., J. Vac. Sci. Technol. All, 2742(1993).Google Scholar
7. Haines, W.G. and Bube, R.H., J. Appl. Phys. 49, 304(1978).Google Scholar
8. Wu, W.F. and Chiou, B.S., Thin Solid Films 247, 201(1994).Google Scholar
9. Chaudhuri, S., Bhattacharyya, J. and Pal, A.K., Thin Solid Films 148, 279(1987).Google Scholar
10. Karasawa, T. and Miyata, Y., Thin Solid Films 223, 135(1993).Google Scholar
11. Shigesato, Y., Takaki, S. and Haranoh, T., J. Appl. Phys. 71, 3356(1992).Google Scholar
12. Higuchi, M., Uekusa, S., Nakano, R. and Yokogawa, K., J. Appl. Phys. 74, 6710(1993).Google Scholar
13. Meng, L.J., Maçarico, A. and Martins, R., Vacuum 46(7), 673(1995).Google Scholar
14. Powder Diffraction File, Joint Committee on Powder Diffraction Standards, 1967 (ASTM, Philadelphia, PA, 1967) Card 6–0416.Google Scholar
15. Wu, W.F. and Chiou, B.S., Applied Surface Science 68, 497(1993).Google Scholar