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A Study of Atomic Layer Deposition and Reactive Plasma Compatibilitywith Mesoporous Organosilicate Glass Films

Published online by Cambridge University Press:  01 February 2011

E. Todd Ryan ,
Melissa Freeman ,
Lynne Svedberg ,
J.J. Lee ,
Todd Guenther ,
Jim Connor ,
Katie Yu ,
Jianing Sun  and
David W. Gidley
E. Todd Ryan
Affiliation:
Advanced Micro Devices, 1 AMD Place, Sunnyvale, CA 94088
Melissa Freeman
Affiliation:
Motorola, APRDL, 3501 Ed Bluestein Blvd., Austin, TX 78721
Lynne Svedberg
Affiliation:
Motorola, APRDL, 3501 Ed Bluestein Blvd., Austin, TX 78721
J.J. Lee
Affiliation:
Motorola, APRDL, 3501 Ed Bluestein Blvd., Austin, TX 78721
Todd Guenther
Affiliation:
Motorola, APRDL, 3501 Ed Bluestein Blvd., Austin, TX 78721
Jim Connor
Affiliation:
Motorola, APRDL, 3501 Ed Bluestein Blvd., Austin, TX 78721
Katie Yu
Affiliation:
Motorola, APRDL, 3501 Ed Bluestein Blvd., Austin, TX 78721
Jianing Sun
Affiliation:
University of Michigan, Department of Physics, Ann Arbor, MI, 48109
David W. Gidley
Affiliation:
University of Michigan, Department of Physics, Ann Arbor, MI, 48109
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Abstract

The compatibility of ALD and CVD metal deposition with mesoporous and microporous carbon-doped organosilicate glass (OSG) films was examined. Blanket film studies using TEM, TOF-SIMS, and positron lifetime spectroscopy demonstrate that ALD Wand TaN penetrate deep into the mesoporous film via the film's connected pore structure. In contrast, metal penetration into microporous OSG films was not observed. He and NH3 plasma pretreatments to the mesoporous OSG film surface did not seal the mesopores to ALD metal penetration, but the plasmas did damage the bulk of the mesoporous OSG film with varying severity. The results indicate that porosity, pore size, and/or pore structure regulate ALD/CVD precursor diffusion and that ALD metal deposition is a good probe of pore sealing strategies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E10.8
Copyright
Copyright © Materials Research Society 2003

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