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Study of BF2 ion implantation into crystalline silicon : Influence of fluorine on boron diffusion

Published online by Cambridge University Press:  17 March 2011

Lilya Ihaddadene-Lecoq ,
Jerome Marcon  and
Kaouther Ketata
Lilya Ihaddadene-Lecoq
Affiliation:
Laboratory of Electronic Microtechnology and Instrumentation (LEMI)University of ROUEN, 76821 Mont saint Aignan, France
Jerome Marcon
Affiliation:
Laboratory of Electronic Microtechnology and Instrumentation (LEMI)University of ROUEN, 76821 Mont saint Aignan, France
Kaouther Ketata
Affiliation:
Laboratory of Electronic Microtechnology and Instrumentation (LEMI)University of ROUEN, 76821 Mont saint Aignan, France
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Abstract

We have investigated and modeled the diffusion of boron implanted into crystalline silicon in the form of boron difluoride BF2+. Low energy BF2+ 1×1015 cm−2 implantations at 2.0keV were characterized using Secondary Ion Mass Spectrometry (SIMS) in order to measure dopant profiles. RTA was carried out at 950°C, 1000°C, 1050°C and 1100°C during 10s, 20s, 30s and 60s. The results show that concentration profiles for BF2+ implant are shallower than those for a direct B+ ion implantation. This could be attributed to the presence of fluorine which trap interstitial Si so that interstitial silicon supersaturation is low near the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C8.9
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Jeng, S. P., Ma, T. P.; J. Appl. Phys. 61 (11) (1992) 1310.Google Scholar
2. Vuong, H.H., Gossmann, H. J., Rafferty, C. S., Luftman, H. S., Unterwald, F. C., Jacobson, D. C., Ahrens, R. E., Boone, T., Zeitzoff, P. M.. J. Appl. Phys. 77 (7) (1995) 3056.Google Scholar
3. Downey, D. F., Chow, J. W., Ishida, E. and Jones, K. S.. Appl. Phys. Lett. 73 (9) (1998) 1263.Google Scholar
4. Park, Y. J. and Kim, J. J.. J. Appl. Phys. 85 (2) (1999) 803.Google Scholar
5. Jacques, J.M., Robertson, L.S., Jones, K.S., Bennett, J. and Rendon, M.. Mat. Res. Symp. Proc. Vol. 717. (2002).Google Scholar
6. Downey, D. F., Osburn, C. M., Cummings, J., Daryanani, S. L. and Falk, S.. Thin Solid Films 308/309. 562 (1997).Google Scholar
7. Downey, D. F., Osburn, C. M. and Marcus, S.. Solid State Technol. 71, (1997).Google Scholar
8. Boussaid, F., Benzohra, M., Olivie, F., Alquier, D. and Martinez, A.; Nucl. Instr. And Meth. In Phys. Res. B 134 (1998) 195–201.Google Scholar
9. Ohyu, K., Itoga, T. and Natsuaki, N.. Jpn. J. Appl. Phys. 29, 457 (1990).Google Scholar
10. Ando, S., Horie, H., Imai, M., Oikawa, k., Kato, H., Ishiwari, H. and Hijiya, S.. IEEE Symp. VLSI tech. 65 (1990).Google Scholar
11. Ohyu, K., Itoga, T. and Natsuaki, N.. Jpn. J. Appl. Phys. 29, 457 (1990).Google Scholar
12. Chen, Y., Wang, G., Li, D., Oak, S., Shrivastav, G., Rubin, L., Tasch, A. F. and Banergee, S.. IEEE Trans. Elect. Dev. 49 (9) (2002) 1519.Google Scholar
13. Webb, R., Kerford, M., Emerson, N., Smith, R., Harrison, M. and Foad, M.. Proceedings of the 13th International Conference on Ion Implantation Technology. Kyoto, Japan (1998) p.764.Google Scholar
14. Tian, S.. Nucl. Inst. and Meth. in Phys. Res. B 215 (2004) 403–412.Google Scholar
15. Yang, S. H., Morris, S. J., Tian, S., Parab, K.B., Obradovic, B., Morris, M., Tasch, A. F. and Snell, C. M.. Proceedings of the 11th International Conference on Ion Implantation Technology. Austin, TX (1996) p. 547.Google Scholar
16. Gupta, P., Park, C., Klein, K., Yang, S. H., Morris, S. J., Do, V., Tasch, A. F., Simonton, R. and lux, G.. Proceedings of MaterialResaerch Society Vol. 235 (1992), p. 203.Google Scholar
17. Agarwal, A., Gossmann, H.J., Eaglesham, D.J., Pelaz, L., Herner, S.B., Jacobson, D.C., Haynes, T.E. and Simonton, R.. Material Science in Semiconductor Processing 1, 17, (1998).Google Scholar
18. Suzuki, K.. Solid State Electronics 45 (2001) 1747–1751.Google Scholar
19. Coq, L. Ihaddadene-Le, Marcon, J., Dush-Nicolini, a., Masmoudi, K. and Ketata, K.. Nucl. Inst. and Meth. in Phys.Res. B 216 (2004) 303–307.Google Scholar
20. Uematsu, M., Jap. J. Appl. Phys. 39 (2000) 895 Google Scholar
21. Pichler, P., Jüngling, W., Selberherr, S., Guerrero, E. and Plötzl, H.W., IEEE Trans. Comp. Aid. Des. 4 (1985) 384 Google Scholar