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Study of Electrical Properties of Ge-Nanocrystalline Films Deposited by Cluster-Beam Evaporation Technique

Published online by Cambridge University Press:  09 August 2011

Souri Banedjee ,
H. Ono ,
S. Nozaki  and
H. Morisaki
Souri Banedjee
Affiliation:
souri@cas.uec.ac.jp
H. Ono
Affiliation:
Department of Communications and Systems, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo-182
S. Nozaki
Affiliation:
Department of Communications and Systems, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo-182
H. Morisaki
Affiliation:
Department of Communications and Systems, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu-shi, Tokyo-182
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Abstract

Room temperature current-voltage (I-V) characteristics were studied across the thickness of the Ge nanocrystalline films, prepared by the cluster beam evaporation technique. The films thus prepared are deposited either at room temperature (Ge-RT) or at liquid nitrogen temperature (Ge-LNT). Ge-LNT nanofilm is subjected to oxidation while Ge-RT did not get oxidized. Steps were observed in the I-V characteristics of the thin Ge- LNT samples suggesting the Coulomb Blockade effect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 551
Copyright
Copyright © Materials Research Society 1999

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