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A Study of the Time Scales of Processes Responsible for the Light-induced Degradation of a-Si:H by Pulse Illumination

Published online by Cambridge University Press:  17 March 2011

Paul Stradins ,
Michio Kondo  and
Akihisa Matsuda
Paul Stradins
Affiliation:
Thin Film Silicon Solar Cells Super Laboratory, Electrotechnical Laboratory Tsukuba, Ibaraki 305-8568, Japan, emailstradins@etl.go.jp
Michio Kondo
Affiliation:
Thin Film Silicon Solar Cells Super Laboratory, Electrotechnical Laboratory Tsukuba, Ibaraki 305-8568, Japan
Akihisa Matsuda
Affiliation:
Thin Film Silicon Solar Cells Super Laboratory, Electrotechnical Laboratory Tsukuba, Ibaraki 305-8568, Japan
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Abstract

Degradation properties of a-Si:H and a-Si:D by pairs of intense light pulse pairs are examined. By varying the delay time between pulses in a pair while keeping the total illumination time and dose constant, the time scales involved in the light-induced defect creation are investigated. In nanosecond pulse case, we find a sharp drop in degradation efficiency with delay time, followed by further gradual decrease at much longer times. For microsecond pulses, the degradation efficiency varies with the delay time in microseconds. The recombination proceeds bimolecularly and is largely completed during the pulse. It is suggested that the first stage of degradation is related to bimolecular recombination that takes place during the pulse. The second stage is possibly related to longer-living metastable species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A3.1
Copyright
Copyright © Materials Research Society 2000

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References

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