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Study of Thermal Stability of Cvd Ta205/Si Interface

Published online by Cambridge University Press:  10 February 2011

A. Y. Mao ,
K. A. Son ,
J. M. White ,
D. L. Kwong ,
D. A. Roberts  and
R. N. Vrtis
A. Y. Mao
Affiliation:
Science and Technology Center, University of Texas at Austin, Austin, Texas 78712
K. A. Son
Affiliation:
Science and Technology Center, University of Texas at Austin, Austin, Texas 78712
J. M. White
Affiliation:
Science and Technology Center, University of Texas at Austin, Austin, Texas 78712
D. L. Kwong
Affiliation:
Science and Technology Center, University of Texas at Austin, Austin, Texas 78712dlkwong@mail.utexas.edu
D. A. Roberts
Affiliation:
Schumacher, A Unit of Air Products and Chemicals, Inc., Carlsbad, California 92009
R. N. Vrtis
Affiliation:
Schumacher, A Unit of Air Products and Chemicals, Inc., Carlsbad, California 92009
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Abstract

The effects of vacuum and inert gas annealing of ultra-thin (20Å) CVD Ta2O5 films deposited on Si substrates, with and without oxynitride interface layer, on the Ta2O5/Si interface stability were examined extensively by means of in-situ X-ray Photoelectron Spectroscopy (XPS), ex-situ Time-of-Flight Secondary Ion mass Spectrometry (ToF-SIMS), and Temperature Programmed Reaction (TPR). When annealed to 680 °C for up to 50 min, changes in ∼ 20Å Ta2O5 films formed on Si(100) are negligible, but annealing to 820 °C for 10 min in vacuum, Ar or N2 produces major chemical restructuring. SiO is formed at the Ta2O5 - Si(100) interfaces and becomes incorporated into the tantalum oxide. A reduced form of Ta, attributed to TaSix, forms at the buried interface. Extending the annealing time to 20 min produces no further changes. SiO desorbs during annealing at 1000 °C. Nitriding Si prior to forming the Ta2O5 film deposition inhibits these processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 473
Copyright
Copyright © Materials Research Society 1999

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References

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