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Suppression of Boron Transient Enhanced Diffusion in SiGe HBTs by Carbon Incorporation

Published online by Cambridge University Press:  15 February 2011

L. D. Lanzerotti ,
J. C. Sturm ,
E. Stach ,
R. Hull ,
T. Buyuklimanli  and
C. Magee
L. D. Lanzerotti
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NY 08544
J. C. Sturm
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NY 08544
E. Stach
Affiliation:
Department of Materials Science, University of Virginia, Charlottesville, VA 22903
R. Hull
Affiliation:
Department of Materials Science, University of Virginia, Charlottesville, VA 22903
T. Buyuklimanli
Affiliation:
Evans East, Plainsboro, NJ 08536
C. Magee
Affiliation:
Evans East, Plainsboro, NJ 08536
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Abstract

In this paper we demonstrate, using both SIMS and transistor electrical characteristics, that substitutional carbon fractions of 0.5% in heavily doped Si0.8Ge0.2 base heterojunction bipolar transistors (HBTs) reduce both thermal diffusion and transient enhanced diffusion (TED) of boron. Furthermore we show that carbon suppresses TED of boron in carbon-free regions that surround the carbon layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 297
Copyright
Copyright © Materials Research Society 1997

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References

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