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Surface Effects in the Mocvd of Copper

Published online by Cambridge University Press:  25 February 2011

G. M. Nuesca ,
J. Prasad  and
J. A. Kelber
G. M. Nuesca
Affiliation:
Center for Materials Characterization, University of North Texas, Denton, TX 76203
J. Prasad
Affiliation:
Center for Materials Characterization, University of North Texas, Denton, TX 76203
J. A. Kelber
Affiliation:
Center for Materials Characterization, University of North Texas, Denton, TX 76203
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Abstract

Recent findings concerning the surface chemistry of Cu(I)) and Cu(II) betadiketonate precursors on metal and TiN surfaces are reviewed. Interactions of Cu(I) hexafluoroacetylacetonate (L) (Cu(I)(hfac)(L); L=Lewis base) with the surface result in an adsorbed Cu(I)hfac intermediate. Cu(II)(hfac)2 adsorbtion yields the Cu(I)hfac intermediate plus adsorbed hfac. Subsequent exposure to atomic hydrogen volatilizes the adsorbed hfac and results in the reduction of Cu(I) via disproportionation: 2Cu(I)(hfac) ⇒ Cu(0) + Cu(II)(hfac)2 (desorbed). These results demonstrate that disproportionation can occur on contaminant free surfaces under UHV conditions, and that the mechanisms for Cu(I) and Cu(II)/H2 film growth are similar. Implications for selectivity and low temperature deposition are explored. Potential shortcomings of TiN as an adhesion/diffusion barrier are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 177
Copyright
Copyright © Materials Research Society 1994

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References

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