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Surface Morphology and Composition Characterization at the Initial Stages of AlN Crystal Growth

Published online by Cambridge University Press:  17 March 2011

B. Liu ,
Y. Shi ,
L. Liu ,
J.H. Edgar  and
D.N. Braski
B. Liu
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506, U.S.A.
Y. Shi
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506, U.S.A.
L. Liu
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506, U.S.A.
J.H. Edgar
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506, U.S.A.
D.N. Braski
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6139, U.S.A.
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Abstract

The morphology and composition of AlN crystals on 6H-SiC (0001) at the initial stage of crystal growth by sublimation re-condensation technique were investigated by SEM and SAM. Discontinuous AlN coverage occurred after 15 minutes growth. The AlN nuclei size, and growth rate increased as temperature increased or pressure decreased. The SiC substrate decomposed leaving hexagonal hillocks; simultaneously, the AlN nucleated on these SiC hillocks apparently rotated by 15° to 30°. The chemical composition of the substrate and different AlN crystal facets were characterized by SAM. The bare substrate area was stoichiometric SiC with insignificant conversion to silicon nitride, while Si and C preferentially incorporated in the AlN at the initial stages of growth on specific crystal planes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G3.13
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Ponce, F.A., Krusor, B.S., Major, J.S. Jr, Plano, W.E., and Welch, D.F., Appl. Phys. Lett., 67(3), 410 (1995).Google Scholar
2. Slack, G.A., Techniques for Growing AlN Boules (private communication) May 1,1995.Google Scholar
3. Ambacher, O., J. Phys. D: Appl. Phys., 31, 2653 (1998).Google Scholar
4. Uzawa, Y., Wang, Z., Kawakami, A. and Komiyama, B., Appl. Phys. Lett., 66, 1992 (1995).Google Scholar
5. Yoshida, S., Misawa, S. and Itoh, A., Appl. Phys. Lett., 26, 462 (1975).Google Scholar
6. Slack, G.A., McNelly, T.F., J. Cryst. Growth, 34, 263 (1976).Google Scholar
7. Slack, G.A., McNelly, T.F., J. Cryst. Growth, 42, 560 (1977).Google Scholar
8. Schowalter, L.J., Shuterman, Y., Wang, R., Bhat, I., Arunmozhi, G., Slack, G.A., Appl.Phys.Lett. 76, 985 (2000).Google Scholar
9. Balkas, C.M., Sitar, Z., Zheleva, T., Bergman, L., Nemanich, R., and Davis, R.F., J. Cryst. Growth, 179, 363 (1997).Google Scholar
10. Shi, Y., Xie, Z.Y., H. Liu, L., Liu, B., Edgar, J.H. and Kuball, M., “Influence of Buffer Layer and 6H-SiC Substrate Polarity on the Nucleation of AlN Grown by the Sublimation Sandwich Technique”,submitted to J.Cryst. Growth.Google Scholar
11. Ponce, F.A., Walle, C.G. Van de, and Northrup, J.E., Physical Review B, 53(11), 7473 (1996).Google Scholar