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Synthesis of Dislocation Free Siy(SnxC1−x)1−y Alloys by Molecular Beam Deposition and Solid Phase Epitaxy

Published online by Cambridge University Press:  25 February 2011

Gang He ,
Mark D. Savellano  and
Harry A. Atwater
Gang He
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
Mark D. Savellano
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
Harry A. Atwater
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
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Abstract

Synthesis of strain-compensated single-crystal Siy(SnxC1-x)1-y alloy films on silicon (100) substrates has been achieved with compositions of tin and carbon greatly exceeding their normal equilibrium solubility in silicon. Amorphous SiSnC alloys were deposited by molecular beam deposition from solid sources followed by thermal annealing. In situ monitoring of crystallization was done using time-resolved reflectivity. Good solid phase epitaxy was observed for Si0.98Sn0.01C0.01, at a rate about 20 times slower than that of pure silicon. Compositional and structural analysis was done using Rutherford backscattering, electron microprobe, ion channeling, x-ray diffraction, and transmission electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 229
Copyright
Copyright © Materials Research Society 1993

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