Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-27T00:21:00.005Z Has data issue: false hasContentIssue false
  • English
  • Français

Synthesis of New Copper(I) β-Diketonate Compounds for CVD of Copper

Published online by Cambridge University Press:  25 February 2011

H.K. Shin ,
K.-M. Chi ,
M.J. Hampden-Smith ,
T.T. Kodas ,
J.D. Farr  and
M.F. Paffeif
H.K. Shin
Affiliation:
Departments of Chemistry, Los Alamos National Laboratories, Los Alamos, NM 87545
K.-M. Chi
Affiliation:
Departments of Chemistry, Los Alamos National Laboratories, Los Alamos, NM 87545
M.J. Hampden-Smith
Affiliation:
Departments of Chemistry, Los Alamos National Laboratories, Los Alamos, NM 87545
T.T. Kodas
Affiliation:
Chemical Engineering; and Los Alamos National Laboratories, Los Alamos, NM 87545
J.D. Farr
Affiliation:
Chemical Engineering; and Los Alamos National Laboratories, Los Alamos, NM 87545
M.F. Paffeif
Affiliation:
Center for Micro-Engineered Ceramics, University of New Mexico, Albuquerque, NM 87131 CLS-1, Los Alamos National Laboratories, Los Alamos, NM 87545
Get access

Abstract

A series of (0β-diketonate) copper(l) trimethylphosphine compounds has been prepared. These species exist either as liquids or low-melting solids at room temperature. The utility of these compounds as precursors for Chemical Vapor Deposition (CVD) of copper has been examined under a variety of conditions. High purity films with low resistivities have been deposited under a variety of conditions. Selective copper deposition was observed as a function of the substrate, precursor and substrate temperature. Evidence consistent with thermallyinduced disproportionation of the title compounds to form copper metal and copper(II) (β-diketonate)2 during deposition was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 421
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Murarka, S. and Peckerar, M. C., “Electronic Materials Science and Technology”, Academic Press, 1989.Google Scholar
2. Hess, D.W. and Jensen, K.F., “Microelectronics Processing, Chemical Engineering Aspects”, Adv. in Chem. Series, 1989, Vol. 221.Google Scholar
3. Gilliard, J., Hasson, R. and Oudar, J., J. Cryst. Growth, 2, 149, 1968.Google Scholar
4. a. Houle, F.A., Jones, C.R., Baum, T.H., Pico, C. and Kovac, C.A., Appl. Physi Lett. 1985, 46, 204. b: C.Oehr and H. Suhr, Appl. Phys., A., 45, 151, 1988. c. D. Temple and A. Reisman, Technical report number 4, Microelectronic Center of North Carolina, July 2 8 th, 1988.Google Scholar
5. Jeffries, P.M. and Girolami, G.S., Chem. Mater., 1, 8, 1989.Google Scholar
6. Dupuy, C.G., Beach, D.B., Hurst, J.E. and Jasinski, J.M., Chem. Mater., 1, 16, 1989.Google Scholar
7. Beach, D.B., LeGoues, F.K. and Hu, C.-K., Chem. Mater. 2, 216, 1990 Google Scholar
8. Hampden-Smith, M.J., Kodas, T.T., Paffett, M., Farr, J.D. and Shin, H.K., Chem. Mater, 2, 636, 1990.Google Scholar
9. Shin, H.-K., Hampden-Smith, M.J., Kodas, T., Farr, J.D. and Paffett, M., Proc. Mat. Res. Soc. Symp. J., Spring Meeting, San Fransisco 1990, in press.Google Scholar
10. Shin, H.K., Hampden-Smith, M.J., Kodas, T.T. and Duesler, E.N., Polyhedron, in Press.Google Scholar
11. Wolf, W.R., Sievers, R.E. and Brown, G.H., Inorg. Chem., 11, 1995, 1972.Google Scholar
12. Moss, R.H. and Evans, J.S., J. Cryst. Growth, 55, 129, 1981.Google Scholar