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Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

M. Gherasimova ,
B. Gaffey ,
P. Mitev ,
L. J. Guido ,
K. L. Chang ,
K. C. Hsieh ,
S. Mitha  and
J. Spear
M. Gherasimova
Affiliation:
Department of Electrical Engineering, Yale University, Box 208284, New Haven, CT 06520
B. Gaffey
Affiliation:
Department of Electrical Engineering, Yale University, Box 208284, New Haven, CT 06520
P. Mitev
Affiliation:
Department of Electrical Engineering, Yale University, Box 208284, New Haven, CT 06520
L. J. Guido
Affiliation:
Department of Electrical Engineering, Yale University, Box 208284, New Haven, CT 06520
K. L. Chang
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois, 1406 W. Green St., Urbana, IL 61801
K. C. Hsieh
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois, 1406 W. Green St., Urbana, IL 61801
S. Mitha
Affiliation:
Charles Evans & Associates, 301 Chesapeake Dr., Redwood City, CA 94063
J. Spear
Affiliation:
Philips Electronic Instruments, 125 West Gemini Dr., Tempe, AZ 85283
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Abstract

Arsenic-doped GaN films and GaNAs films have been synthesized by MOCVD. Samples were grown on sapphire, GaN-coated sapphire, and GaAs substrates. Composition, structure, and phase distribution were characterized by EPMA, SIMS, XRD, and TEM. The arsenic content increases demonstrably as the growth temperature descreases from 1030 to 700°C. In the high temperature limit, high quality arsenic-doped GaN forms on GaN-coated sapphire. In the low temperature regime, nitrogen-rich GaNAs forms under some growth conditions, with a maximum arsenic mole fraction of 3%, and phase segregation in the form of GaAs precipitates occurs with an increase in arsine pressure, Preferential formation of the nitrogen-rich phase on GaN-coated sapphire suggests the presence of substrate-induced “composition pulling”.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.44
Copyright
Copyright © Materials Research Society 1999

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References

1. Iwata, K., Asahi, H., Asami, K., Kuroiwa, R., and Gonda, S., Jpn. J. Appl. Phys. 37, 1436 (1998).Google Scholar
2. Kuroiwa, R., Asahi, H., Asami, K., Kim, S.-J., Iwata, K., and Gonda, S., Appl. Phys. Lett. 73, 2630 (1998).Google Scholar
3. Zhao, Y., 1998 Electronic Materials Conference, Charlottesville, June, 1998.Google Scholar
4.Sapphire substrate coated with a high-quality, 1 μm thick GaN epitaxial layer.Google Scholar
5.300 Å of GaN deposited on sapphire at 550°C, followed by an arsenic-bearing test layer.Google Scholar
6.The basic method is described in J. Appl. Phys. 64, 3760 (1988). In the present case, the arsenic mole fraction was obtained by dividing the (CsAs)+ ion counts by the sum of the (CsAs)+ and (CsN)+ signals.Google Scholar
7. Hiramatsu, K., Kawaguchi, Y., Shimizu, M., Sawaki, N., Zheleva, T., Davis, R. F., Tsuda, H., Taki, W., Kuwano, N., and Oki, K., MRS Internet J. Nitride Semicond. Res., Vol. 2, Article 6.Google Scholar
8. Guido, L. J., Mitev, P., Gherasimova, M., and Gaffey, B., Appl. Phys. Lett. 72, 2005 (1998).Google Scholar