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A Systematic TEM and Rheed Investigation of the MBE Growth of InxGa1−xAs a Function of Composition

Published online by Cambridge University Press:  25 February 2011

S.P. Edirisinghe ,
A.E. Staton-Bevan ,
D.W. Pashley ,
P. Fawcett  and
B.A. Joyce
S.P. Edirisinghe
Affiliation:
Department of Materials, Imperial College of Science, Technology and Medicine, London, S.W.7 2AZ, U.K.
A.E. Staton-Bevan
Affiliation:
Department of Materials, Imperial College of Science, Technology and Medicine, London, S.W.7 2AZ, U.K.
D.W. Pashley
Affiliation:
Department of Materials, Imperial College of Science, Technology and Medicine, London, S.W.7 2AZ, U.K.
P. Fawcett
Affiliation:
IRC Semiconductor Materials, The Blackett Laboratory, London, S.W.7 2BZ, U.K.
B.A. Joyce
Affiliation:
IRC Semiconductor Materials, The Blackett Laboratory, London, S.W.7 2BZ, U.K.
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Abstract

0.15µm epilayers of InxGa1−xAs grown on GaAs (001) by MBE, having In concentrations in the range x = 0.05 - 0.30, have been investigated using RHEED and TEM. RHEED patterns indicate a 2-D growth mode for low In concentrations changing to Stranski-Krastanov growth for x > 0.30. TEM showed misfit dislocations for x > 0.05 only, which were found to relieve only a small part of the misfit strain. Although threading dislocations were rarely found in the epilayers, dislocations originating at the interface and penetrating the buffer layer were observed for 0.1 < x < 0.25.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 359
Copyright
Copyright © Materials Research Society 1991

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References

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