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The Tail States as Sensitizing Recombination Centers for Holes Lifetime in a-Si:H

Published online by Cambridge University Press:  10 February 2011

Y. Lubianiker ,
R. Rapaport ,
I. Balberg ,
L. Fonseca  and
S.Z. Weisz
Y. Lubianiker
Affiliation:
Racah Institute of Physics, the Hebrew University, Jerusalem 91904, Israel Department of Physics, University of Oregon, Eugene, OR 97403
R. Rapaport
Affiliation:
Racah Institute of Physics, the Hebrew University, Jerusalem 91904, Israel
I. Balberg
Affiliation:
Racah Institute of Physics, the Hebrew University, Jerusalem 91904, Israel
L. Fonseca
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931
S.Z. Weisz
Affiliation:
Department of Physics, University of Puerto Rico, Rio Piedras, PR 00931
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Abstract

We have measured the dependence of the holes mobility-lifetime product on temperature under various light intensities in intrinsic a-Si:H. We find that this product exhibits thermal quenching which is accompanied by a superlinear light intensity dependence. Numerical calculations that we have carried out show that these results can be accounted for within the framework of the conventional recombination model. However, to yield such an agreement the capture coefficients for both charge carriers at the tail states must be smaller than the corresponding coefficients for the dangling bonds. Thus the sensitizing nature of the tail states is revealed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 273
Copyright
Copyright © Materials Research Society 1998

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References

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