Hostname: page-component-848d4c4894-5nwft Total loading time: 0 Render date: 2024-06-08T03:21:35.997Z Has data issue: false hasContentIssue false
  • English
  • Français

Tem and Sem Studies of Defects in Gainas and Gainasp Epitaxial-Layer Device-Type Structures

Published online by Cambridge University Press:  15 February 2011

M.M. Al-Jassim ,
M. Hockly  and
G.R. Booker
M.M. Al-Jassim
Affiliation:
Department of Metallurgy and Science of Materials, Parks Road, Oxford OX1 3PH
M. Hockly
Affiliation:
Department of Metallurgy and Science of Materials, Parks Road, Oxford OX1 3PH
G.R. Booker
Affiliation:
Department of Metallurgy and Science of Materials, Parks Road, Oxford OX1 3PH
Get access

Abstract

TEM and SEM studies have been carried out on a series of GaAs/GaInAs, InP/GaInAs and InP/GaInAsP device-type structures grown either by vapour phase epitaxy (VPE) or liquid phase epitaxy (LPE). By using the TEM high voltage electron microscope operating at 1000kV, a determination was made of the nature, origin and three-dimensional distribution of structural defects in these specimens (mainly dislocations and stacking faults). SEM EBIC and CL examinations were also performed to study the electrical and luminescent properties of these layers. The ultimate aim is to correlate structural information with electrical and luminescent properties, and with device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 521
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hockly, M., Al-Jassim, M.M. and Booker, G.R., J. Microscopy 118, 117 (1980).Google Scholar
2. Fletcher, J. et al. , Inst.Phys.Conf.Ser. No. 52 (1980) pp. 153–6.Google Scholar