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Temperature dependences of channel mobility and threshold voltage in 4H- and 6H-SiC MOSFETs

Published online by Cambridge University Press:  21 March 2011

S. Harada ,
R. Kosugi ,
J. Senzaki ,
S. Suzuki ,
W. J. Cho ,
K. Fukuda  and
K. Arai
S. Harada
Affiliation:
Ultra-low-loss power device technology research body Electrotechnical laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki, Japan
R. Kosugi
Affiliation:
Ultra-low-loss power device technology research body Electrotechnical laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki, Japan
J. Senzaki
Affiliation:
Ultra-low-loss power device technology research body Electrotechnical laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki, Japan
S. Suzuki
Affiliation:
Ultra-low-loss power device technology research body R&D association for future electron devices
W. J. Cho
Affiliation:
Ultra-low-loss power device technology research body Electrotechnical laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki, Japan
K. Fukuda
Affiliation:
Ultra-low-loss power device technology research body Electrotechnical laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki, Japan
K. Arai
Affiliation:
Ultra-low-loss power device technology research body Electrotechnical laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki, Japan
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Abstract

We have investigated the effect of polytype and oxidation condition on the temperature dependence of channel mobility and threshold voltage in 4H- and 6H-SiC MOSFETs. The behaviors of the channel mobility are apparently different for 4H- and 6H-SiC MOSFETs. In contrast to the polytype effect, dry and wet oxidation samples have almost similar channel mobilities. The variation of the threshold voltage with temperature is proportional to the number of the interface states near the conduction band extracted from n-type MOS capacitors. Therefore, we argue that the distribution of the interface states near the conduction band in p-type SiC MOS structure can be represented by that in n-type SiC MOS structure. Although the oxidation condition varies the distribution of the interface states in the energy range between 0.2 and 0.4 eV from the conduction band, it has little influence on the channel mobility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H.37
Copyright
Copyright © Materials Research Society 2001

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References

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