Hostname: page-component-76fb5796d-r6qrq Total loading time: 0 Render date: 2024-04-27T00:23:53.806Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature Dependent Current-Voltage Characteristics of TiSi2/n+/p-Si Shallow Junctions

Published online by Cambridge University Press:  25 February 2011

Bhupen Shah  and
N.M. Ravindra
Bhupen Shah
Affiliation:
Microelectronics Research Center, New Jersey Institute of Technology, Newark, NJ 07102.
N.M. Ravindra
Affiliation:
Microelectronics Research Center, New Jersey Institute of Technology, Newark, NJ 07102.
Get access

Abstract

Modelling of temperature dependent current-voltage characteristics of TiSi2/n+/p-Si shallow junctions has been presented here. The formation of shallow pn junctions, by ion implantation of As+ through Ti films evaporated on p-Si substrates has been performed in these experiments. The temperature dependent factors such as band gap narrowing, intrinsic carrier concentration, mobilities and diffusivities are considered in the model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 133
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1.] Murarka, S.P., Silicides for VLSI Applications. Academic Press. 1983.Google Scholar
[2.] Ravindra, N. M., et al., Mai. Res. Soc. Symp. Proc, Reno, May 1988 Google Scholar
[3.] Wolf, Helmut F., Semiconductors. Pergamon Press, Oxford. 1969.Google Scholar
[4.] Sze, S.M., Seniconductor Devices Physics and Technology, John Wiley & Sons, chapter-2 1985 Google Scholar
[5.] Maex, K. and Keersmaecker, R.P., Physica 129B, North-Halland, Amsterdam, 192–196, 1985 Google Scholar
[6.] Yang, Jeng-Rern and Lue, Juh Tzeng, J. Appl. Phys. 65–3, pp-1039–1043, 1989.CrossRefGoogle Scholar
[7.] Delfino, M., et al., J.Appl. Phys. 62–5, pp-1882–1886, 1987 CrossRefGoogle Scholar
[8.] Rubin, Leonard, et al., J. IEEE Trans., 37, 183–190, 1990 CrossRefGoogle Scholar
[9.] Ravindra, N.M., Private Communication.Google Scholar