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Temperature-Dependent Evolution of Chemisorbed Digermane in Ge Thin Film Growth

Published online by Cambridge University Press:  21 February 2011

Djula Eres  and
J. W. Sharp
Djula Eres
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831–6056
J. W. Sharp
Affiliation:
Department of Physics and Astronomy, The University of Tennessee, Knoxville, TN 37996
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Abstract

The formation and evolution of chemisorbed digermane layers in context with germanium thin film growth was investigated by time-resolved surface reflectometry. Modulation of the source gas supply made possible the separation and independent study of the temperature dependence of the adsorption and desorption processes. The regeneration of active sites by molecular hydrogen desorption was identified as the rate-limiting step at low substrate temperatures. A dynamic method of thin film growth was demonstrated by repetitively replenishing the active film growth sites regenerated between two successive source gas pulses. The film growth rate was shown to be related to the substrate temperature and the delay time between successive source gas pulses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 243
Copyright
Copyright © Materials Research Society 1992

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References

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