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Temperature-Dependent Studies of a-SiC:H Growth by Remote Plasma CVD Using Methylsilanes

Published online by Cambridge University Press:  10 February 2011

Moon-Sook Lee ,
Pratik Lal  and
Stacey F. Bent
Moon-Sook Lee
Affiliation:
Department of Chemistry, New York University, 100 Washington Square East, New York, NY 10003, stacey.bent@nyu.edu
Pratik Lal
Affiliation:
Department of Chemistry, New York University, 100 Washington Square East, New York, NY 10003, stacey.bent@nyu.edu
Stacey F. Bent
Affiliation:
Department of Chemistry, New York University, 100 Washington Square East, New York, NY 10003, stacey.bent@nyu.edu
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Abstract

Thin hydrogenated amorphous silicon carbide (a-SiC:H) films were grown at substrate temperatures ranging from 200 K to 600 K by remote ECR plasma-enhanced CVD. Mono- and trimethylsilane were used as single source precursors. The films grown using both precursors were compared as a function of temperature by in situ multiple internal reflection Fourier transform infrared (MIR-FTIR) spectroscopy. The difference in growth temperature leads to changes in both the hydrogen content and the composition of the film. At low growth temperature, films incorporate high concentrations of intact methyl group and a mixture of SiHx (x=1–3) groups, with a polysilane-like structure. At higher temperatures, the hydrogen content decreases. This decrease is observed in two different ways: (1) a loss of highly hydrogenated SiHx groups (SiH3 or SiH2); and (2) a shift from methyl groups to CH2 and CH bonding. However, the temperature dependence of each functional group is found to be different for the two precursors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 153
Copyright
Copyright © Materials Research Society 1998

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