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Theoretical and Experimental Investigation of Disordering Effects on Photoluminescence Spectra of InGaAs/InGaAsP Quantum Wells

Published online by Cambridge University Press:  10 February 2011

J. C. Yi ,
W. J. Choi ,
S. Lee ,
D.H. Woo  and
S. H. Kim
J. C. Yi
Affiliation:
EE Dept., Hong Ik Univ., Sangsu 72-1, Mapo, Seoul, 121-791, wave@wow.hongik, ac.kr
W. J. Choi
Affiliation:
Photonics Research Center, KIST, P.O.Box 131, Cheongryang, Seoul, 130-650, Korea.
S. Lee
Affiliation:
Photonics Research Center, KIST, P.O.Box 131, Cheongryang, Seoul, 130-650, Korea.
D.H. Woo
Affiliation:
Photonics Research Center, KIST, P.O.Box 131, Cheongryang, Seoul, 130-650, Korea.
S. H. Kim
Affiliation:
Photonics Research Center, KIST, P.O.Box 131, Cheongryang, Seoul, 130-650, Korea.
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Abstract

The effect of disordering on photoluminescence spectra of InGaAs/InGaAsP quantum wells has been investigated experimentally and theoretically taking into account the valence band intermixing, strain, exciton effects, and the non-identical diffusion constants for group III and V materials. The disordering profile of 1.55Q InGaAs/InGaAsP quantum wells lattice matched to InP has been controlled by choice of the cap layer materials as well as the diffusion time and diffusion temperature. By comparing the experimental data and theoretical calculations, the diffusion constant for each material has been extracted.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 519
Copyright
Copyright © Materials Research Society 2000

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References

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