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Theory of Pressure Effects on Silicon Nanocrystallites

Published online by Cambridge University Press:  15 February 2011

G. Allan ,
C. Delerue  and
M. Lannoo
G. Allan
Affiliation:
Institut d'Electronique et de Microélectronique du Nord, Département Institut Supérieur d'Electronique du Nord, BP 69, 59652 Villeneuve d'Ascq Cedex, France, gal@isen.fr
C. Delerue
Affiliation:
Institut d'Electronique et de Microélectronique du Nord, Département Institut Supérieur d'Electronique du Nord, BP 69, 59652 Villeneuve d'Ascq Cedex, France, gal@isen.fr
M. Lannoo
Affiliation:
Institut d'Electronique et de Microélectronique du Nord, Département Institut Supérieur d'Electronique du Nord, BP 69, 59652 Villeneuve d'Ascq Cedex, France, gal@isen.fr
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Abstract

Pressure effects on silicon nanocrystallites are calculated using semi-empirical tight-binding and ab-initio local density calculations. Using the confinement model in porous silicon a red shift of the luminescence energy with increasing pressure is obtained. Quantum confinement in BC8 phase silicon nanocrystallites obtained after release of high pressure are also studied. It increases the cluster gap and also enhances the electron-hole radiative recombination rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 75
Copyright
Copyright © Materials Research Society 1997

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References

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