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Thermal Oxidation of Si Nanoparticles Grown by Plasma-Enhanced CVD

Published online by Cambridge University Press:  17 March 2011

Debabrata Das ,
Jordi Farjas ,
Josep Costa ,
Pere Roura ,
Gregorio Viera  and
Enric Bertran
Debabrata Das
Affiliation:
GRM, Departament de Física, Universitat de Girona, Campus Montilivi, E17071 Girona, Catalonia, Spain
Jordi Farjas
Affiliation:
GRM, Departament de Física, Universitat de Girona, Campus Montilivi, E17071 Girona, Catalonia, Spain
Josep Costa
Affiliation:
GRM, Departament de Física, Universitat de Girona, Campus Montilivi, E17071 Girona, Catalonia, Spain
Pere Roura
Affiliation:
GRM, Departament de Física, Universitat de Girona, Campus Montilivi, E17071 Girona, Catalonia, Spain
Gregorio Viera
Affiliation:
FEMAN, Departament de Física Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, 4 planta, E08028 Barcelona, Catalonia, Spain
Enric Bertran
Affiliation:
FEMAN, Departament de Física Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, 4 planta, E08028 Barcelona, Catalonia, Spain
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Abstract

Nanoparticles of amorphous silicon were grown by plasma-enhanced CVD. Their high hydrogen content has a great influence on the oxidation kinetics. Oxidation experiments done in a thermo-balance show that during a heating ramp under oxygen the onset of oxidation shifts to higher temperatures when hydrogen content is reduced by annealing. Apparently this higher oxidation rate of the as-grown particles is due to the great density of dangling bonds that are left behind just after the hydrogen is desorpted. This fact is supported by analyzing the oxidation dynamics under isothermal conditions. At lower temperature, when oxidation takes place just after hydrogen desorption, the oxidation transient begins with a finite slope which indicates that oxidation is not diffusion controlled. On the other hand, at higher temperatures, activation energy of the parabolic rate constant indicates that the oxide layer formed is less protective than the oxide layer formed on crystalline silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A5.11
Copyright
Copyright © Materials Research Society 2000

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References

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