Hostname: page-component-848d4c4894-p2v8j Total loading time: 0.001 Render date: 2024-06-04T16:09:59.923Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermomechanical Stresses in Copper Interconnect/Low-κ Dielectric Systems

Published online by Cambridge University Press:  17 March 2011

Y.-L. Shen  and
E. S. Ege
Y.-L. Shen
Affiliation:
Department of Mechanical Engineering, University of New Mexico Albuquerque, NM 87131, U.S.A
E. S. Ege
Affiliation:
Department of Mechanical Engineering, University of New Mexico Albuquerque, NM 87131, U.S.A
Get access

Abstract

Numerical simulations of thermal stresses in copper interconnect and low-κ dielectric systems are carried out. The analyses include two- and three-dimensional finite element modeling of the interconnect structure. Various combinations of metal, oxide and polymer-based low-κ dielectric schemes are considered in the simulation. The evolution of stresses and deformation pattern in copper, barrier layers, and the dielectrics are critically assessed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F6.26
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Zhao, J.-H., Qi, W.-J., and Ho, P. S., Microelectron. Reliab. 42, 27 (2002).CrossRefGoogle Scholar
2. Shen, Y.-L. and Ramamurty, U., J. Vac. Sci. Technol. B 21, 1258 (2003).Google Scholar
3. Ege, E. S. and Shen, Y.-L., J. Electronic Mater. 32, 1000 (2003).Google Scholar
4.ABAQUS, Version 6.4, Abaqus, Inc., Pawtucket, Rhode Island.Google Scholar
5.Web site: www.dow.com/silk/lit/index.htm, The Dow Chemical Company.Google Scholar
6. Shen, Y.-L., J. Appl. Phys. 82, 1578 (1997).Google Scholar
7. Gouldstone, A., Shen, Y.-L., Suresh, S., and Thompson, C. V., J. Mater. Res., 13, 1956 (1998).Google Scholar
8. Kilijanski, M. S. and Shen, Y.-L., Microelectron. Reliab. 42, 259 (2002).CrossRefGoogle Scholar
9. Hu, C. K., Rosenberg, R., and Lee, K. Y., Appl. Phys. Lett. 74, 2945 (1999).Google Scholar
10. Hau-Riege, C. S., Microelectron. Reliab. 44, 195 (2004).CrossRefGoogle Scholar
11. Fayolle, M., Passemard, G., Assous, M., Louis, D., Beverina, A., Gobil, Y., Cluzel, J., Arnaud, L., Microelectronic Engng. 60, 119 (2002).CrossRefGoogle Scholar
12. Shaw, T. M., Liu, X.-H., Murray, C., Wisniewski, M. Y., Fiorenza, G., Lane, M., Chiras, S., Rosenberg, R. R., Filippi, R., Mcgrath, J., Rathore, H. and Mcgahay, V., presentation U9.1, 2003 MRS Fall Meeting, Boston, MA.Google Scholar