Hostname: page-component-848d4c4894-ndmmz Total loading time: 0 Render date: 2024-05-21T20:56:36.430Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermopower, Electrical and Hall Conductivity of Undoped and Doped Iron Disilicide Single Crystals

Published online by Cambridge University Press:  15 February 2011

A. Heinrich ,
G. Behr ,
H. Griessmann ,
S. Teichert  and
H. Lange
A. Heinrich
Affiliation:
Institut für Festkörper- und Werkstofforschung Dresden, Helmholtzstr.20, D-01069 Dresden, Germany
G. Behr
Affiliation:
Institut für Festkörper- und Werkstofforschung Dresden, Helmholtzstr.20, D-01069 Dresden, Germany
H. Griessmann
Affiliation:
Institut für Festkörper- und Werkstofforschung Dresden, Helmholtzstr.20, D-01069 Dresden, Germany
S. Teichert
Affiliation:
Technische Universität Chemnitz-Zwickau, Institut für Physik, D-09107 Chemnitz, Germany
H. Lange
Affiliation:
Hahn-Meitner Institut Berlin GmbH, Abt. Photovoltaik, Rudower Chaussee 6, D-12489 Berlin, Germany
Get access

Abstract

The electrical transport properties of β-FeSi2 single crystals have been investigated in dependence on the purity of the source material and on doping with 3d transition metals. The transport properties included are electrical conducticvity, Hall conductivity and thermopower mainly in the temperature range from 4K to 300K. The single crystals have been prepared by chemical transport reaction in a closed system with iodine as transport agent. In undoped single crystals prepared with 5N Fe both electrical conductivity and thermopower depend on the composition within the homogeinity range of β-FeSi2 which is explained by different intrinsic defects at the Sirich and Fe-rich phase boundaries. In both undoped and doped single crystals impurity band conduction is observed at low temperatures but above 100K extrinsic behaviour determined by shallow impurity states. The thermopower shows between 100K and 200K a significant phonon drag contribution which depends on intrinsic defects and additional doping. The Hall resistivity is considered mainly with respect to an anomalous contribution found in p-type and n-type single crystals and thin films. In addition doped single crystals show at temperatures below about 130K an hysteresis of the Hall voltage. These results make former mobility data uncertain. Comparison will be made between the transport properties of single crystals and polycrystalline material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 478: Symposium Q – Thermoelectric Materials - New Directions and Approaches , 1997 , 255
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lange, H., in Silicide Thin Films-Fabrication, Properties and Applications, edited by Tung, R.T., Maex, K., Pellgrini, P.W., and Allen, L.H. (Mater. Res. Soc. Proc. 402, Pittsburgh, PA, 1996), p. 307.Google Scholar
2. Nishida, I., J. Mater. Sci. Soc. Jap. 15, 72 (1978).Google Scholar
3. Vining, C. B., in CRC Handbook of Thermoelectrics, edited by Rowe, D. M. (CRC Press, Boca Raton, 1995) p. 277; in Proc. IX Int.Conf.Thermoelectrics, edited by C.B. Vining (JPL, Pasadena, CA, 1990) p. 249.Google Scholar
4. Ware, R.M. and McNeill, D.J., Proc. IEE 111, 178 (1964).Google Scholar
5. Birklolz, U. and Schelmi, J., phys.stat.sol. (a) 27, 413 (1968).Google Scholar
6. Ivanova, I.D., Abrikosova, N.Kh., Elagina, E.I. and Khostikova, V.D., Izv. Akad. Nauk SSSR, Neorg. Mater. 5, 1933 (1969).Google Scholar
7. Nishida, I., Phys. Rev. B 7, 2710 (1972).Google Scholar
8. Waldecker, G., Meinhold, H. and Birkholz, U., phys. stat. sol. (a) 15, 143 (1973).Google Scholar
9. Isoda, Y., Ohkoshi, T., Nishida, I. and Kaibe, H., J. Mater. Sci. Soc. Jap. 25, 311 (1989).Google Scholar
10. Kojima, T., phys. stat. sol. (a) 111, 233 (1989).Google Scholar
11. Stöhrer, U., Voggesberger, R., Wagner, G. and Birkholz, U., En. Conv. Mgmt. 20, 143 (1990).Google Scholar
12. Tokiai, T. and Uesugi, T., J. Am. Ceram. Soc. 78, 1089; J. Ceram. Soc. Jap. 103, 661 (1995).Google Scholar
13. GroB, E., Riffel, M. and Stöhrer, U., J. Mater. Res. 10, 34 (1995).Google Scholar
14. Komabayashi, M., Hijikata, K., Ido, S., Jap. J. Appl. Phys. 29, 1118 (1990); 30, 331 (1991).Google Scholar
15. Komabayashi, M. and Ido, S., Jap. J. Appl. Phys. 30, 2883 (1991); J. Ceram. Soc. Jap. 100, 21(1992).Google Scholar
16. Matsubara, K., Kuno, H., Okuno, Y., Takaoka, H. and Takagi, T., Proc. ISIAT'83 & IPAT'83, (Kyoto 1983) p. 1221.Google Scholar
17. Powalla, M. and Herz, K., Appl. Surf. Science 70/71, 593 (1993).Google Scholar
18. Matsubara, K., Kishimoto, K, Nagao, K., Ueda, O., Miki, T., Koyanagi, T. and Fujii, I., in Proc. XII Int. Conf. Thermoelectrics, edited K, Matsuura (WEE Japan, Yokohama, 1993) p.223; Y. Isoda, M.A. Okamoto, T. Ohkoshi and I.A. Nishida, Appl. Surf. Science 70/71, 593 (1993), p. 192.Google Scholar
19. Heinrich, A., Gladun, C., Burkov, A., Tomm, Y., Brehme, S. and Lange, H., in Proc. XIV. Int. Conf Thermoelectrics, edited by Vedemikov, M. (St. Petersburg, 1995) p. 259.Google Scholar
20. Teichert, S., Kilper, R, Franke, T., Erben, J., H~iussler, P., Henrion, W., Lange, H. and Paknin, D., Appl. Surf. Science 91, 56 (1995).Google Scholar
21. Kinel, H.v., Kafader, U., Sutter, P., Onda, N., Sirringhaus, H., Mifller, E., Kroll, U., Schwarz, C. and Goncalves-Conzo, , Mat. Res. Soc. Proc. 320, 73 (1994).Google Scholar
22. Regolini, J.L., Trincat, F., Berberzier, I. and Shapira, Y., Appl. Phys. Lett. 60, 956 (1992).Google Scholar
23. Filonov, A.B., Migas, D.B., Shaposhnikov, V.L., Dorozhkin, N.N., Petrov, G.V., Borisenko, V.E., Henrion, W. and Lange, H., J. Appl. Phys. 79, 7708 (1996).Google Scholar
24. Lange, H., phys. stat. sol. (b) 201, No1 (1997).Google Scholar
25. Rademacher, K., PhD Thesis, RTWH Aachen, 1994.Google Scholar
26. Kloc, Ch., Arushanov, E., Wendl, M., Hohl, H., Malang, U. and Busher, E., J. Alloys Comp., 219, 93 (1995).Google Scholar
27. Arushanov, E., Kioc, Ch., Hohl, H. and Bucher, E., J. Appl. Phys. 75, 5106 (1994).Google Scholar
28. Arushanov, E., Kloc, Ch. and Bucher, E., Phys. Rev. B 50, 2653 (1995); E. Arushanov, E. Bucher, Ch. Kloc, O. Kulikowva, L. Kulyuk and A. Siminel, J. Appl. Phys. 75, 5106 (1994) 52, 20 (1995).Google Scholar
29. Brehme, S., Ivanenko, L., Tomm, Y., Reinsperger, G.-U., Strauβ, P. and Lange, H., in Silicide Thin Films – Fabrication, Properties and Applications, edited by Tung, R.T., Maex, K., Pellgrini, P.W. and Allen, L.H. (Mater. Res. Soc. Proc. 402, Pittsburgh, PA, 1996), p. 355.Google Scholar
30. Heinrich, A., Burkov, AS., Gladun, C., Behr, G., Herz, K, Schumann, J. and Powalla, H., in Proc. XV. Int. Conf. Thermoelectrics, edited by Caillat, T. (JPL, Pasadena, CA, 1996) p. 57.Google Scholar
31. Kubaschewski, O., in Iron-Binary Phase Diagrams (Springer, Berlin, 1982), p. 136.Google Scholar
32. Takizawa, H., Mo, P.F., Endo, T. and Shimida, M., J. Mat. Science 30, 4199 (1995).Google Scholar
33. Miki, T. Matsui, Y., Matsubara, K., Kishimoto, K., Nagao, K and Fujii, I., in Proc. XII. Int. Conf. Thermoelectrics, edited K, Matsuura (LEE Japan, Yokohama, 1993), p 29.Google Scholar
34. Weise, G. and Oswian, G., Kristall und Technik 11, 729 (1976).Google Scholar
35. Behr, G., Werner, J., Weise, G., Heinrich, A., Burkov, A and Gladun, C., phys. stat. sol. (a) 160 (1997) in press.Google Scholar
36. Irmscher, K, Gelhoff, W., Tomm, Y., Lange, H. and Alexs, V., Phys. Rev. B 55, 4417 (1997).Google Scholar
37. Shklovskii, B.I. and Efros, A.L., Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984), p. 240.Google Scholar
38. Dimitriades, C.A., Werner, J.H., Logothetidis, S., Stutzmann, M., Weber, J. and Nesper, R., J. Appl. Phys. 68, 1726 (1990).Google Scholar
39. Tassis, D.H., Mitsas, C.L., Zorba, T.T., Dimitriadis, C.A., Valassiades, O., Siapkas, D.I., Angelakeris, M., Poulpoulos, P. and Flevaris, N.K, J. Appl. Phys. 80, 962 (1996).Google Scholar
40. Valassiades, O., Dimitriades, C.A. and Werner, J.H., J. Appl. Phys. 70, 890 (1991).Google Scholar
41. Teichert, S., Beddies, G., Tomm, Y., Hinneberg, H.-J. and Lange, H., phys. stat. sol. (a) 152, K15 (1995).Google Scholar
42. Teichert, S., PhD Thesis, Technical University Chemnitz, 1996.Google Scholar
43. Arushanov, E., Respaud, M., Broto, J.M., Kloc, Ch., Leotin, J. and Bucher, E., Phys. Rev. B 53, 5108 (1996).Google Scholar
44. Herring, C., Phys. Rev. 96, 163 (1954).Google Scholar